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EN
High quality, large (25 mm in diameter) crystals of ZnSe and Zn(Se,S) were grown by low-temperature physical vapour transport method and characterized by various techniques, i.e. energy dispersive X-ray fluorescence spectrometry, double-crystal X-ray diffraction rocking curve FWHM, reflectivity measurements in the region of free exciton, electrical measurements and photoluminescence measurements for both low and high excitation densities. The measurement of the photoluminescence related to the neutral-donor-bound exciton revealed superlinear log(photoluminescence intensity) versus log(excitation intensity) dependence, which indicates stimulated emission phenomena.
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EN
Co^{2+} centre in ZnTe has been proved to be an acceptor, contrary to the previous assignment, but in agreement with the general trend in the behaviour of the transition metal impurities in the II-VI compounds. The threshold of the Co^{2+} + hν → Co^{+1} + h transition has been found in the spectrum of photoconductivity at about 1.4 eV, close to the value already reported.
EN
In this paper we present our observation of electric dipole spin resonance and current induced spin resonance in ZnO bulk crystals, both effects result from spin-orbit coupling. Electric dipole spin resonance originates from admixture of spin state due to spin-orbit interaction which leads to probability of spin-flip caused by electric component of microwave field. In current induced spin resonance phenomenon the electric component of microwave field induces electron motion leading to mean ac spin-orbit field that acts on electron spin. Spin-orbit interaction can be described in terms of the Rashba field, an effective magnetic field that induce spin resonance. In contrast to magnetic and electric dipole spin resonances the current induced resonance is characterized by dispersive-like line shape.
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EN
The extended X-ray absorption fine structure (EXAFS) technique has been used to investigate the first shell coordination in zinc-blende quaternary Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} (0.0 ≤ x ≤ 0.15; 0.0 ≤ y ≤ 0.20) alloys. The experimental data have been collected with the use of synchrotron radiation. All the nearest-neighbour distances have been found as linearly dependent on Se and Mn concentration. For each composition a consistent deviation from full random distribution of Mn atoms around Se and Te atoms was observed. Possible reasons of preferential Mn-Se over Mn-Te pairing were discussed.
EN
Halogen transport method was applied to grow the crystals of solid solutions of ZnSe and transition metals at the temperature far below the melting point and phase transition temperature. The large crystals of ZnMnSe, ZnFeSe, ZnNiSe and ZnFeSSe were obtained. The technological parameters and shape of the quartz reactor were chosen for growth of a large crystal by self-nucleation; the transparent quartz furnace enabled the control of nucleation by visual observation. The parameters of crystal growth were determined. The crystal quality was estimated by X-ray diffraction method. The composition of crystals was determined by electron microprobe analysis and energy dispersive X-ray fluorescence analysis.
EN
Reflectivity spectra of HgSe crystals highly doped with Ga and Fe, respectively, were investigated in the spectral region close to the absorption edge at temperatures between 12 K and 295 K. From the analysis of the structure observed in reflectivity the temperature dependence of the Fermi energy was determined for both kinds of crystals.
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EN
The results of FIR magnetoreflectivity of HgSe:Cr are presented. They are interpreted using a classical dynamic dielectric function.
EN
New trends in the field of thermoelectrics are discussed for PbTe-based semiconductor thermoelectric materials exhibiting density of states engineering effects strongly enhancing thermoelectric power (PbMnTe) and spontaneous formation of nano-scale two-phase crystal structures (PbTeCdTe) – technologically scalable realization of electron crystal - phonon glass concept of new thermoelectric materials.
EN
The Angle-Resolved Photoemission Electron Spectroscopy (AR PES) was applied to investigate the electronic structure of HgSe and Hg_{1-x}Fe_{x}Se crystals for (110) surface. The measured set of Angle-Resolved Energy Distribution Curves (AR EDCs) permits to determine some of the elements of the electronic band structure E(k) (energy-momentum dependence for ҐKX and ҐX directions in the Brillouin zone) for measured crystals. The Fe 3d contribution gives the states lying over the edge of the valence band of HgSe crystal (0.25 eV), and into the valence band.
EN
ZnTe-Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} heterojunctions were prepared by vapor-transport epitaxy of ZnTe on In-doped Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} (x = 0.05, y = 0.03) single crystalline substrate in vacuum. At temperatures lower than 120 K the infrared and red electroluminescence were observed from the ZnTe-Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} diode with forward current density in the range 0.003-4.0 A/cm^{2}.
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Iron Impurity Related Optical Transitions in HgSe:Fe

76%
EN
Fe^{2+} crystal field transitions and the heavy hole valence band to the Fe level transitions (e + Fe^{3+} → Fe^{2+}) have been observed and discussed for HgSe doped with iron.
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EN
The low-temperature far-infrared reflectivity spectra of HgSe and HgSeS are measured and analysed. The results suggest the one-mode behavior of phonon excitations in HgSeS mixed crystals.
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Stimulated Emission in Zn(Se,S) Single Crystals

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EN
Two different types of optically pumped stimulated emission were observed at 1.8 K in the high quality Zn(Se,S) crystals grown by low temperature physical vapour transport. One type, occurring at moderate excitation levels, is ascribed to the recombination of excitons localized because of chemical disorder in the two-anion mixed crystal. The other type, occurring at high excitation levels, is related to the inelastic exciton-exciton scattering.
EN
The high pressure Bridgman technique was used to grow Zn_{1-x}Mn_{x}Te:P crystals. Under the N_{2} pressure of 30 atm., we obtained the p^{+}-Zn_{1-x}Mn_{x}Te single crystals 8-10 mm in diameter, with free-carrier densities as high as p ≈ 8×10^{18} cm^{-3} and the room temperature conductivity σ(RT) ≈ 30 Ω^{-1}cm^{-1}. Magnetoresistance measurements were carried out down to 1.3 K and up to 6 T. In Zn_{1-x}Mn_{x}Te:P a strong increase in the acceptor binding energy as well as an immense (ρ(0,1.3K)/ρ(6T,1.3K) > 10^{3}) negative magnetoresistance are observed, by contrast, not seen in diamagnetic ZnTe:P. It is shown that these effects come from the formation of bound magnetic polarons and their destruction by an external magnetic field.
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Spin-Lattice Relaxation Beyond the Debye Approximation

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EN
In this paper we present the results of magnetization relaxation in HgCdMnTe at high magnetic fields. In this mixed crystal the TA phonons have an energy lower than the spin splitting of the Mn^{2+} ground orbital singlet at about 20 T, which allows to check the effect of phonons with wave vectors from the edges of the Brillouin zone on the spin-lattice relaxation.
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Substrates Grown from the Vapor for ZnO Homoepitaxy

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EN
The novel method of preparation of epi-ready ZnO substrates is demonstrated. The substrates were made of unique ZnO crystals grown by chemical vapor transport method using hydrogen as the transport agent. The effect of low-level doping (Mn, Co, Cu, and V) on the structural quality of the crystals was investigated. Atomic layer deposition was used to verify usability of the substrates for homoepitaxy. The thermal annealing prior to the atomic layer deposition process and effect of thermal annealing of the epitaxial layers was studied. The X-ray diffraction and atomic force microscopy methods were applied to study the structural quality of the ZnO layers. Detection of the dopants in the substrates by secondary ion mass spectroscopy made possible the measurement of the thickness of the layers. The obtained root mean square roughness for both the substrates and layers ranged between 0.2 nm and 5 nm, and was dependent on the sample crystallographic orientation and sequence of polishing and annealing procedures. The optimal recipe for the epi-ready substrate preparation was formulated.
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Magnetic Susceptibility of Cd_{1-x}Fe_{x}Te_{1-y}Se_{y}

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EN
Magnetic susceptibility of Cd_{1-x}Fe_{x}Te_{1-y}Se_{y} was found to consist of Van Vleck term (characteristic for the Fe^{2+} centers in tetrahedral crystal symmetry) and temperature-dependent contribution. The occurrence of the latter indicates an existence of additional magnetic moments. We ascribe their origin to the modification of the Fe^{2+} energy level spectrum induced by mixed Te-Se anion environment.
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The phenomenon of Fano type resonant photoemission was used to distinguish the Fe electrons derived partial contribution to the valence band of a semimagnetic semiconductor Cd_{1-x}Fe_{x}Se. The states appearing at the middle of the valence band correspond to the Fe 3d electrons while the step of the density of states obtained at the valence band edge region correspondsvto the hybridized s-p-d electrons.
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Is the Magnetism of HgSe:Fe Clearly Understood?

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EN
The high magnetic field magnetization measurements of low composition Hg_{1-x}Fe_{x}Se (0.0002 < x < 0.003) at temperatures ranging from 1.6 K to 40 K and in magnetic fields up to 20 T are reported. The magnetization in a sample containing only Fe^{3+} ions (x = 0.0002) is described by the Brillouin function (j = 5/2). The magnetization in the sample codoped with Ga, containing only Fe^{2+} is well described in the model of isolated Fe^{2+} ions. The latter model takes into account the tetrahedral crystal field, the spin-orbit interaction and the Zeeman term. On the other hand, the magnetization of sample with both Fe^{3+} and Fe^{2+} present simultaneously (x = 0.003) is shown to be different from a simple additive superposition of the contributions due to Fe^{3+} and Fe^{2+} subsystems. The possible origin of this discrepancy is discussed.
EN
In this work we studied the influence of an external electric voltage on spatial dimensions of CdZnTe mixed crystals. In order to get an absolute magnitude of the sample thickness and to gain insight to the changes of lateral dimension, in quasi-bulk 3 μm thick CdZnTe layers grown by molecular beam epitaxy square craters were formed by ion sputtering in a secondary ion mass spectrometer. The vertical and lateral dimensions of the craters were studied by the atomic force microscopy. The atomic force microscopy measurement revealed that the thickness of the CdZnTe layer increases in a result of applying a single voltage pulse to the sample surface and decreases reversibly after applying reversely biased voltage. The voltage triggering was high enough to switch the conductivity state of the sample i.e., the effect of thickness change is accompanied by the effect of conductivity switching. The thickness change is significant, reaching several percents of the entire layer thickness.
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