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Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates

100%

Benyahia D., Kubiszyn Ł., Michalczewski K., Kębłowski A., Martyniuk P., Piotrowski J., Rogalski A.

Acta Physica Polonica A

2017

vol. 132

issue 2

322-324

Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between GaAs substrate and InAs/GaSb superlattices. X-ray diffraction characterization shows a good crystalline quality for both samples, with a full width at half maximum of 190 arcsec and 156 arcsec for the zeroth-order peak of the superlattice grown on GaAs and on GaSb substrate, respectively. The Nomarski microscopy revealed a shiny surface for both samples with a root main square of surface roughness of 9 nm and 11 nm on the case of growing on GaSb and GaAs substrate, respectively.

High-quality MBE growth of AlχGa1-χ As-based THz quantum cascade lasers

81%

Roch T., Andrews A., Fasching G., Benz A., Schrenk W., Unterrainer K., Strasser G.

Open Physics

2007

vol. 5

issue 2

244-251

High-quality GaAs-based quantum cascade laser (QCL) structures for the terahertz (THz) emission have been grown by solid source molecular-beam epitaxy. Ex-situ high-resolution x-ray diffraction shows that layer thickness and its control is the most critical growth aspect and that the lasing potential of the structure can be determined by the thickness accuracy of the layers. For our samples, the thickness tolerance for working lasing structures emitting approximately 100 μm was determined to be minimally above 1% for a 15 μm active region which was composed of 54.6 nm cascade cells. Increasing interface roughness adversely affects the lasing threshold and power.

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1 Acta Physica Polonica A

1 Open Physics

1 2017

1 2007

1 Andrews A.

1 Benyahia D.

1 Benz A.

1 Fasching G.

1 Kubiszyn Ł.

1 Kębłowski A.

1 Martyniuk P.

1 Michalczewski K.

1 Piotrowski J.

1 Roch T.

1 Rogalski A.

1 Schrenk W.

1 Strasser G.

1 Unterrainer K.

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Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates

High-quality MBE growth of AlχGa1-χ As-based THz quantum cascade lasers