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Origin of Point Defects in β-Ga₂O₃ Single Crystals Doped with Mg²⁺ Ions

100%
Luchechko A., Vasyltsiv V., Kostyk L., Tsvetkova O.
Acta Physica Polonica A
|
2018
|
vol. 133
|
issue 4
811-815
EN
Optical absorption and photoconductivity investigations of nominal pure and Mg²⁺ doped β-Ga₂O₃ single crystals have been carried out. Additional bands in the UV (3.6-4.6 eV) and near-IR (0.4-1.2 eV) spectral regions were found in optical absorption and photoconductivity spectra. A correlation between Mg²⁺ doping, annealing in oxygen atmosphere as well as optical absorption and photoconductivity bands were established in gallium oxide. Electronic transitions from shallow traps and F-centers were observed in the IR spectral region (0.4-1.2 eV). Absorption and photoconductivity in the UV region are related to deep acceptor levels created by native defects and impurities.
2
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The Luminescence of CdWO_4:Tb,Li Crystals under Synchrotron Excitation at 10 K

88%
Novosad S., Kostyk L., Novosad I., Luchechko A., Stryganyuk G.
Acta Physica Polonica A
|
2012
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vol. 122
|
issue 4
717-720
EN
The luminescent properties of CdWO_4:Tb,Li crystals have been investigated at 10 K in the region 4-25 eV using synchrotron excitation. It is shown that besides the intrinsic matrix luminescence the number emission lines due to electron f-f-transitions in Tb^{3+} ions are efficiently excited at near-edge region of the fundamental absorption (E_{exc} = 4.1 eV). The weak recombination luminescence of terbium impurity on the background of intensive matrix luminescence is observed under excitation in the region of fundamental absorption (E_{exc} = 5.4 and 13.8 eV). It is shown that the luminescence spectrum of the matrix is a superposition of three elementary bands 2.07, 2.47, and 2.73 eV. The nature of emission bands is discussed.
3
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Optical Properties of GGG Epitaxial Films Grown from PbO-B₂O₃-V₂O₅ Flux

88%
Syvorotka I., Sugak D., Luchechko A., Zhydachevskyy Y., Ubizskii S.
Acta Physica Polonica A
|
2018
|
vol. 133
|
issue 4
954-958
EN
The paper reports a growth of the high-quality Gd₃Ga₅O₁₂ (GGG) homoepitaxial films by the liquid phase epitaxy technique using the PbO-B₂O₃ and PbO-B₂O₃-V₂O₅ fluxes. The influence of the flux composition containing V₂O₅ as well as the growth temperature is discussed basing on the optical absorption and the electron probe micro analysis results.
4
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Optical Absorption and Luminescence of Gd_{3}Ga_{5}O_{12}:Cr,Mg Epitaxial Films

76%
Zakharko Y., Syvorotka I., Luchechko A., Syvorotka I., Sugak D., Vakiv M.
Acta Physica Polonica A
|
2010
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vol. 117
|
issue 1
111-113
EN
The optical absorption, emission spectra and luminescence decay kinetics under photoexcitation of Gd_{3}Ga_{5}O_{12} (GGG) garnet epitaxial films doped with Cr^{3+} ions and co-doped with Cr^{3+} and Mg^{2+} ions have been investigated. Luminescence of the GGG:Cr films due to ^{4}T_{2} → ^{4}A_{2} and ^{2}E → ^{4}A_{2} transitions in Cr^{3+} ions have been observed. Increase of the activator ions concentration has an influence on the intensity and decay time of Cr^{3+} ions photoluminescence. Introduction of the magnesium ions leads to partial transformation of chromium valence state (Cr^{3+} → Cr^{4+}) and to the appearance of a broad absorption band with the maximum at 860 nm. The narrow lines with luminescence maxima at 704 and 706 nm have arisen in the highly doped GGG:Cr,Mg films.
5
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Recombination Luminescence in Ca_{3-x}Cd_xGa₂Ge₃O₁₂ Garnets Doped with Eu³⁺ Ions

76%
Kostyk L., Luchechko A., Novosad S., Panasyuk M., Rudko M., Tsvetkova O.
Acta Physica Polonica A
|
2018
|
vol. 133
|
issue 4
943-947
EN
The results of the investigations of X-ray excitation spectra, thermostimulated luminescence and influence of light illumination on the thermoluminescence glow curves of Eu³⁺-doped Ca_{3-x}Cd_xGa₂Ge₃O₁₂ garnet polycrystalline samples are presented. It is shown that Ca_{3-x}Cd_xGa₂Ge₃O₁₂ polycrystalline samples are characterized by intrinsic luminescence, which consists of several components. The nature of intrinsic luminescence is discussed. It is suggested that the nature of thermoluminescence glow peak near 150 K is connected with the [(V_{Ge}+V_{O})¯-F⁺] associations formed under X-ray irradiation at 85 K. The influence of light illumination on the TSL intensity of the preliminary X-ray irradiated samples is shown.
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