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EN
Faraday rotation in Hg_{1-x}Mn_{x}Te (x = 0.11) has been investigated experimentally over the temperature range from T = 8 K to 250 K using a Q-switched CO_{2} laser. Due to the exchange interaction between mobile carriers and localized Mn ions, dramatic enhancement of Verdet coefficient at low temperatures has been observed. The values of Verdet coefficient V = 5585 rad T^{-1} m^{-1} at 8 K and V = 1745 rad T^{-1} m^{-1} at 80 K have been obtained for Hg_{0.89}Mn_{0.11}Te at 10.6 μm. The dependence of Faraday rotation on intensity of laser radiation has been observed. Intensity dependent Faraday rotation shows saturation for high laser power. Intensity induced rotation is qualitatively attributed to the dispersion associated with saturable absorption of laser radiation. The results obtained in this work indicate that Hg_{1-x}Mn_{x}Te is a suitable material for Faraday rotator at CO_{2} laser wavelengths for high power laser beam.
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EN
Self-focusing of laser beams is observed in Cd_{0.5}Mn_{0.5}Te at room temperature. The far-field patterns of laser beam after passing through the cadmium manganese telluride crystal are investigated. The values of focal length as well as the absorption coefficient were measured as a function of intensity of laser radiation. From these measurements the values of nonlinear refractive index for Cd_{0.5}Mn_{0.5}Te are determined. The results indicate that the self-focusing observed in Cd_{1-x}Mn_{x}Te is due to a thermally induced change in refractive index.
EN
In PbSnMnTe crystals with the concentration of conducting holes of the order of 10^{21} cm^{-3}, the magnetic anisotropy constant K measured in ferromagnetic resonance experiments is nearly one order of magnitude larger than expected. In the present paper we investigate a contribution ΔK to the anisotropy constant, origin of which is the s-d interaction and the spin-orbit coupling.
EN
Results of simultaneous doping of ZnTe with manganese and chromium are presented. An increase of magnetization of ferromagnetic Cr-related clusters with manganese concentration is observed. Phosphorus doping prevents the formation of ferromagnetic clusters.
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EN
Thermally induced self-focusing of laser beam and optical bistability in CdMnTe at room temperature has been investigated. Photothermal focal length as a function of intensity of laser radiation has been measured in Cd_{1-x}Mn_{x}Te for 0.3 ≤ x ≤ 0.6. The time-dependence of the transmitted power for various laser intensities has been investigated and the switching from the transparent to dark state has been observed. For the first time the optical bistable characteristic has been measured in CdMnTe. The results indicate that CdMnTe is a suitable material for cavityless, large contrast, thermally induced absorptive bistable operation in visible region.
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Magnetic Properties of ZMTO Alloys

81%
EN
The results of the magnetization and photoluminescence measurements of the ZMTO are presented. Under field cooling conditions a phase transition is observed. The dependence of the temperature of transition on oxygen concentration is analyzed. A model is proposed.
EN
Measurement of photoluminescence as a function of temperature and of magnetic field in p-type phosphorus doped Cd_{1-x}Mn_{x}Te is reported. From the conduction band-acceptor level transition, the ionization energy of P-acceptors is obtained to be 54ą1 meV. The photoluminescence spectrum in the band edge region exhibits three maxima connected with the recombination of excitons bound to neutral acceptors (A^{0}, X), excitons bound to neutral donors (D^{0},X), and free excitons (X) at energies E_{(A^{0},X)}=1.606, E_{(D^{0},X)}=1.610, and E_{X}=1.614 eV, respectively. At T=1.4 K a strong increase in PL intensity of (A^{0}, X) line 8-fold as a function of magnetic field is found and shown to originate from the magnetic field-induced lowering of the acceptor binding energy and increase in the hole effective volume.
EN
Photovoltaic spectra of PbTe p-n junction have been measured in the infrared spectral region in the temperature range of 8-260 K. The p-n junctions have been formed by cadmium diffusion into the p-type PbTe crystals. From the positions of the photovoltaic maxima the energy gap of the diode material has been determined. In the presence of a magnetic field up to 7 T, a pronounced oscillatory behavior of the photovoltage was observed in the Faraday and Voigt configurations. Experiments were performed as a function of the magnetic field intensity at a constant wavelength of the incident light. The energy of the interband magnetooptical transitions between the Landau levels in PbTe was determined and compared with the theoretical model of Adler, describing the energy band structure for the IV-VI compounds.
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EN
The results of optically detected magnetic and cyclotron resonance ex­periments performed on Cd_{1-x}Mn_{x}Te (x = 0.007) are presented. It is shown that the Mn^{2+} magnetic resonance results in heating of free holes, which can be observed via the effects of hot holes on the CdMnTe "edge" emission.
EN
The ac magnetic susceptibility (χ) was measured in the temperature range T = (1.5÷50) K for Pb_{1-x-y}Sn_{y}Mn_{x}Te samples with a composition y = 0.72, x = 0.015÷0.04 and carrier concentrations in the range p = (2.85÷14) × 10^{20} cm^{-3}. The breakdown of ferromagnetism and the formation of a spin glass phase are observed with an increasing carrier concentration. It is experimentally evidenced as continuous deviation of χ(T) from the characteristic critical behavior observed for ferromagnetic samples.
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EN
The first experimental evidence of the magnetic quantum oscillation in the photovoltaic effect of Pb_{1-x}Mn_{x}Se p-n junctions is reported. The p-n junctions were obtained in Pb_{1-x}MnxSe crystals with manganese content, 0 ≤ x ≤ 0.08 by introducing Cd donors by diffusion. Measurements were per formed between 5-85 K and in the presence of the magnetic field 0-7 T in the Faraday and Voigt configurations of the incident infrared radiation of various photon energies in the vicinity of the energy gap of a Pb_{1-x}Mn_{x}Se. Strong oscillatory behavior of the photovoltage was observed as a function of the magnetic field intensity at a constant wavelength of the incident light. Using the model of Adler of the energy band structure modified by the exchange terms, and after identification of the initial and final states of the transitions, we derive the band parameters of the Pb_{1-x}Mn_{x}Se crystals.
EN
The light emitting devices based on the p-Zn_{1-x}Mn_{x}Te bicrystals have been fabricated. The Zn_{1-x}Mn_{x}Te devices produce red and green emission originating from the internal d-shell transitions in the Mn^{2+} ions and the donor-acceptor pairs recombination, respectively. A critical behavior of the magnetic field dependence of the green emission intensity and a positive magnetoresistance near the Curie-Weiss temperature in the Zn_{1-x}Mn_{x}Te devices was observed.
EN
Magnetic contribution to the specific heat, magnetic susceptibility and Hall effect are experimentally studied in Pb_{1-x-y}Sn_{y}Mn_{x}Te semimagnetic semiconductors with y=0.72 and x=0.08 and with different carrier concentrations 10^{20} ≤ p ≤ 10^{21} cm^{-3}. The ferromagnetism observed in crystals with p ≥ 3×10^{20} cm^{-3} breaks down with a decreasing concentration of carriers due to an increasing competition between Ruderman-Kittel-Kasuya-Yoshida and superexchange interactions.
EN
At temperatures lower than 200 K the photomemory effect has been observed in ZnTe-Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} heterojunctions. The persistent photoconductivity can be achieved either by illumination from an external light source or by a self-absorption of the electroluminescence radiation when a voltage of about 10 V for a few seconds is applied to the diode. Current-voltage characteristics are of the form I~ V^{m}. The capacitance and electroluminescence measurements show that the photomemory effect in ZnTe-Cd_{1-x}Mn_{x} Te_{1-y}Se_{y} heterojunctions can be caused by the bistable nature of the In dopant in the Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} substrate. In the high resistivity interface layer and the substrate material indium forms centers similar to DX-like centers in Zn_{x}Cd_{1-x}Te and Cd_{1-x}Mn_{x}Te.
EN
The Zn_{1-x}Mn_xTe_{1-y}O_y alloy was prepared using a rapid crystallization technique. X-ray diffraction measurements were used to estimate the oxygen doping level. It is demonstrated that the oxygen solubility in Zn_{1-x} Mn_xTe_{1-y}O_y alloys greatly depends on the manganese concentration. No oxygen related effects were observed in the manganese free samples. The highest value of the oxygen molar fraction (y) achieved in the present study was 0.0023 in a sample having manganese fraction (x) of 0.056. The decrease in the alloy band gap was observed with increasing oxygen content. The oxygen-related trap level in Zn_{1-x}Mn_xTe_{1-y}O_y was found to be strongly shifted with respect to that in ZnTe_{1-y}O_y. The shift is assigned to a creation of complex (Mn_xO) traps.
EN
The resonant photoemission spectroscopy was applied to investigate the valence band electronic structure of semimagnetic semiconductor Pb_{0.92}Mn_{0.08}Se crystal and to determine the contribution of Mn 3d electrons to the valence band. The set of energy distribution curves and constant initial states spectra were taken for by energies in the region (40-60 eV) close to the Mn 3p-3d transition. The electrons Mn 3d hybridize and contribute to the valence band electrons of the crystal and main density of states contribution appears in the energy 3.5 ± 0.2 eV below the valence band edge.
EN
The dominant mechanism responsible for the optical detection of the Mn^{2+} magnetic resonance in Cd_{1-x}Mn_{x}Te (x = 0.095, 0.007) is explained. By either change of the external magnetic field or by setting the conditions for the Mn^{2+} magnetic resonance, we could change the relative efficiencies of the two competing excitonic recombination processes. By lowering magnetization at the magnetic resonance, recombination via the acceptor bound exciton channel, which is mainly nonradiative, is enhanced. Then, a large up to 50% decrease in the total photoluminescence efficiency was observed in the optically detected magnetic resonance experiment. Such observation allows for verification of the large efficiency of the Auger-type transition responsible for the nonradiative decay of the acceptor bound exciton.
EN
The photoluminescence and optically detected magnetic resonance studies of Cd_{1-x}Mn_{x}Te (x = 0.095) are presented. The Mn^{2+} magnetic resonance is detected optically via the changes of "edge" emission induced by the decrease of the Mn spin system magnetization.
19
Content available remote

Magnetic Anisotropy in Eus-pbs Multilayers

52%
EN
We present the results of ferromagnetic resonance studies of the thickness dependence of magnetic anisotropy in 2 series of EuS-PbS multilayers grown on (111) BaF_{2} and (100) KCl substrates with the EuS thickness varying in the range d=6-70 Å. The anisotropy constant K was found to follow the dependence K(d)=K_{V}+2K_{S}/d , with the surface term K_{S} larger for layers grown on BaF_{2} as compared to KCl. This difference is discussed in terms of different thermal stress-induced distortions of cubic crystal lattice of EuS. We found that the thickness of EuS layer required for the perpendicular (to the layer) magnetization is d ≤ 2-3 Å, i.e., it is below 1 monolayer.
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EN
Electric conductivity, Hall effect and magnetic susceptibility of Pb_{1-x-y} Sn_{y}Gd_{x}Te mixed crystals with 0.13 ≤ y ≤ 0.93 and 0.001 ≤ x ≤ 0.04 were experimentally studied over the temperature range 4K ≤ T ≤ 300 K. The incorporation of Gd ions into the Pb_{1-y}Sn_{y}Te matrix results in semi-metallic n-type conductivity of the crystals with y < 0.6. For crystals with y > 0.6 one observes only semi-metallic p-type conductivity. We present a model explaining these results in terms of the Sn composition dependence of the location of Gd^{2+/3+} level with respect to the band edges of PbSnGdTe.
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