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Dynamics of Excitation Transfer Inside InAs/GaAs Quantum Dot System

100%
Korona K., Babiński A., Raymond S., Wasilewski Z.
Acta Physica Polonica A
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2006
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vol. 110
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issue 2
219-224
EN
We present time-resolved photoluminescence investigations of InAs/GaAs structures containing quantum dots with the ground state at 1.43 eV. State filling effect and a Pauli blocking effect were clearly observed. These effects significantly influenced dynamics of excitation transfer from upper to lower state inside a dot leading to non-exponential dynamics. Numerical model based on nonlinear rate equations was proposed. The model described well the experimental data providing values of: lifetime of the ground state 0.53±0.03 ns, lifetime of excited state (when the ground state is full) 1.1±0.2 ns, and internal relaxation time (when the ground state is empty) 0.07±0.01 ns.
2
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Localization of Excitons in the Wetting Layer Accompanying Self-Assembled InAs/GaAs Quantum Dots

88%
Babinski A., Raymond S., Wasilewski Z., Lapointe J., Potemski A.
Acta Physica Polonica A
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2004
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vol. 105
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issue 6
547-552
EN
A wetting layer is a narrow, highly strained quantum well, which accompanies quantum dots grown in Stranski-Krastanow mode. Its importance for a full description of the quantum dots properties has recently been pointed out. It has been shown for example that excitons can be localized by potential fluctuations in the wetting layer. This is equivalent to the formation of "natural" quantum dots in the WL. Excitonic emission from the single dots formed in the wetting layer accompanying the InAs/GaAs self-assembled quantum dots has been investigated in a high magnetic field (up to 23 T). Quadruplet splitting of the investigated emission line has been observed. The attribution of the emission line to the recombination of negatively charged exciton is discussed.
3
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Emission from Mesoscopic-Size Islands Formed in a GaAs/AlAs Double Layer Structure

76%
Wysmołek A., Chwalisz B., Potemski M., Stępniewski R., Babiński A., Raymond S., Thierry-Mieg V.
Acta Physica Polonica A
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2004
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vol. 106
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issue 3
367-381
EN
The nature of sharp emission lines which are present in macro-luminescence experiments on a type-II GaAs/AlAs double quantum well structure is discussed. The experiments, which also include micro-lumines- cence measurements, allowed us to conclude that the sharp emission lines observed originate from lateral GaAlAs islands of a fewμm in diameter. They serve as efficient type-I recombination centers for indirect excitons and/or carriers which diffuse in the GaAs/AlAs QW structure and strongly affect the emission processes observed in macro-luminescence experiments. These traps can easily be filled with electron-hole pairs, giving rise to the formation of neutral excitons as well as more complex excitonic molecules. Magneto-luminescence spectra from single islands resemble those observed for natural quantum dots formed in narrow GaAs quantum wells.
4
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Neutral and Charged Excitons Localized in the InAs/GaAs Wetting Layer

64%
Babiński A., Czyż M., Golnik A., Borysiuk J., Kret S., Raymond S., Lapointe J., Wasilewski Z.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1055-1060
EN
It has recently been shown that potential fluctuations in a wetting layer, which accompanies InAs/GaAs quantum dots can localize excitons. Neutral excitons and biexcitons and charged excitons were identified. In this communication we report on studies of properties of the excitons over wide temperature range (T < 70 K). The micro-photoluminescence measurements enable investigation of excitons localized in a single potential fluctuation. Temperature-induced broadening of the neutral exciton as well as a quenching of the charged exciton at temperatures higher than 50 K are observed and discussed.
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