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Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs

100%

Kundrotas J., Čerškus A., Valušis G., Lachab M., Khanna S., Harrison P., Linfield E.

Acta Physica Polonica A

2008

vol. 113

issue 3

963-966

We present a study of the photoluminescence properties of heavily Be δ-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈3×10^{12} cm^{-2}.

Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells

68%

Seliuta D., Čechavičius B., Kavaliauskas J., Krivaitė G., Grigelionis I., Balakauskas S., Valušis G., Sherliker B., Halsall M., Lachab M., Khanna S., Harrison P., Linfield E.

Acta Physica Polonica A

2008

vol. 113

issue 3

909-912

The authors demonstrate selective detection of terahertz radiation employing berylliumδ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.

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2 Acta Physica Polonica A

2 2008

2 Harrison P.

2 Khanna S.

2 Lachab M.

2 Linfield E.

2 Valušis G.

1 Balakauskas S.

1 Grigelionis I.

1 Halsall M.

1 Kavaliauskas J.

1 Krivaitė G.

1 Kundrotas J.

1 Seliuta D.

1 Sherliker B.

1 Čechavičius B.

1 Čerškus A.

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Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs

Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells