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1
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Annealing Effect on Dark Electrical Conductivity and Photoconductivity of Ga-In-Se Thin Films

100%
Isik M., Gullu H.
Acta Physica Polonica A
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2018
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vol. 133
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issue 5
1119-1124
EN
Dark-conductivity and photoconductivity properties of thermally evaporated Ga-In-Se (GIS) thin films were investigated in the temperature range of 80-430 K. All measurements were performed on as-grown and annealed GIS thin films at 300 and 400° to get information about the effect of the annealing temperature on the conductivity properties. Room temperature conductivity was obtained as 1.8 × 10^{-8} Ω^{-1} cm^{-1} for as-grown films and increased to 3.6 × 10^{-4} Ω^{-1} cm^{-1} for annealed films at 400°. Analysis of the dark-conductivity data of as-grown films revealed nearly intrinsic type of conductivity with 1.70 eV band gap energy. Temperature dependent dark conductivity curves exhibited two regions in the 260-360 and 370-430 K for both of annealed GIS films. Conductivity activation energies were found as 0.05, 0.16 and 0.05, 0.56 eV for films annealed at temperatures of 300 and 400°, respectively. The dependence of photoconductivity on illumination intensity was also studied in the range from 17 to 113 mW/cm^{2}.
2
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Compositional Dependence of Optical Modes Frequencies in TlGa_xIn_{1-x}S_2 Layered Mixed Crystals (0 ≤ x ≤1)

81%
Isik M., Gasanly N., Korkmaz F.
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vol. 126
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issue 3
747-751
EN
The infrared transmittance and Raman scattering spectra in TlGa_xIn_{1-x}S_2 (0 ≤ x ≤1) layered mixed crystals grown by the Bridgman method were studied in the frequency ranges of 400-2000 and 250-400 cm^{-1}, respectively. The bands observed at room temperature in IR transmittance spectra of TlGa_xIn_{1-x}S_2 were interpreted in terms of multiphonon absorption processes. The dependences of the frequencies of IR- and Raman-active modes on the composition of TlGa_xIn_{1-x}S_2 mixed crystals were also established. The structural characterization of the mixed crystals was investigated by means of X-ray diffraction measurements and compositional dependence of lattice parameters was revealed.
3
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Analysis of Thermoluminescence Glow Peaks in β-Irradiated TlGaSeS Crystals

81%
Isik M., Yildirim T., Gasanly N.
Acta Physica Polonica A
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2016
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vol. 129
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issue 6
1165-1168
EN
Thermoluminescence properties of TlGaSeS layered single crystals were investigated in the temperature range of 280-720 K. Thermoluminescence glow curve exhibited three peaks with maximum temperatures of ≈370, 437, and 490 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers. All applied methods resulted with energies around 0.82, 0.91, and 0.99 eV. Dose dependence of the thermoluminescence intensity was also examined for the doses in the range of 0.7-457.6 Gy. Peak maximum intensity of the observed peak around 370 K showed an increase up to a certain dose and then a decrease at higher doses. This non-monotonic dose dependence was discussed under the light of a reported model in which different kinds of competition between radiative and nonradiative recombination centers during excitation or heating stages of the thermoluminescence process are explained.
4
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Low-Temperature Thermoluminescence Studies on TlInS_{2} Layered Single Crystals

81%
Isik M., Delice S., Gasanly N.
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vol. 126
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issue 6
1299-1303
EN
Thermoluminescence characteristics of TlInS_{2} layered single crystals grown by the Bridgman method were investigated in the low temperature range of 10-300 K. The illuminated sample with blue light ( ≈ 470 nm) at 10 K was heated at constant heating rate. Curve fitting, initial rise and various heating rate methods were used to determine the activation energy of the trap levels. All applied methods showed good consistency about the presence of five trapping centers located at 14, 19, 350, 420, and 520 meV. Behavior of the TL curve for various heating rates was investigated. Traps distribution has also been studied. The activation energies of the distributed trapping centers were found to be increasing from 14 to 46 meV.
5
Content available remote

Deep Traps Distribution in TlInS_2 Layered Crystals

81%
Isik M., Gasanly N., Ozkan H.
Acta Physica Polonica A
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2009
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vol. 115
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issue 3
732-737
EN
The trap centers and distributions in TlInS_2 were studied in the temperature range of 100-300 K by using thermally stimulated currents technique. Experimental evidence was found for the presence of three trapping centers with activation energies 400, 570, and 650 meV. Their capture cross-sections were determined as 6.3 × 10^{-16}, 2.7× 10^{-12}, and 1.8× 10^{-11} cm^{2}, respectively. It was concluded that in these centers retrapping is negligible as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. An exponential distribution of hole traps was revealed from the analysis of the thermally stimulated current data obtained at different light excitation temperatures. This experimental technique provided a value of 800 meV/decade for the trap distribution.
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