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EN
We present theoretical analysis of bromine adsorption on the Ge(001)-p(1Ã-2) surface. Bromine adsorbs dissociatively at the Ge(001) surface and the adlayer of bromine develops ordered structures of adatoms bound to substrate dimers. We analyse atomic configurations of the Ge(001) surface covered by 0.25, 0.5, 0.75 and 1 monolayer of bromine. Various stable surface structures, found in calculations, are presented and their energies are compared. Simulated STM images are also discussed for the considered configurations.
Open Physics
|
2009
|
vol. 7
|
issue 2
291-294
EN
Continuing miniaturization of electronic devices necessarily requires assembly of several different objects or devices in a small space. Therefore, besides thin films growth, the possibility of fabricating wires and dots [1, 2] at the nanometre scale composed of metal silicides is of the top interest. This report is about the STM/STS investigation of cobalt silicides’ nanostructures created on Si(111)-(√19 Ã- √19) substrates via Co evaporation and post deposition annealing. This (√19 Ã- √19) reconstruction was induced by Ni doping. Less than 1ML of Co on surface was obtained. Surface reconstruction induced growth of agglomerates of clusters rather than an uniform layer. The post deposition annealing of a crystal sample (up to 670 K, 770 K, 870 K, 970 K, 1070 K and 1170 K) led to creation of silicides’ nanostructures. Measurements showed that coalescence of Co nanoislands begun around 970 K. Annealing above 1070 K led to alloying of a Co, Ni and Si. As a consequence the Si(111)-(7Ã-7) reconstruction occurred at the cost of Si(111)-(√19 Ã- √19).
EN
This paper reports our scanning tunneling microscopy and spectroscopy (STM/STS) study of double-walled and multi-walled carbon nanotubes (CNTs) of different diameter deposited on Bi2Te3 (narrow gap semiconductor). The approximate diameter of the studied double-walled and multi-walled CNTs was 2 nm and 8 nm, respectively. Crystalline Bi2Te3 was used as a substrate to enhance the contrast between the CNTs and the substrate in the STS measurements performed to examine peculiarities of CNT morphology, such as junctions, ends or structural defects, in terms of their electronic structure.
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