Based on commercial Burleigh METRIS^{TM}-2000 Atomic Force Microscope two methods of magnetic force measurements were realised. The developed system was successfully applied for study of magnetic structure of both YIG-garnet and CoNi/Pt magneto-optic multilayers.
The influence of He^+ ion bombardment on magnetoresistance, magnetization reversal and domain structure of sputtered (Ni_{80}Fe_{20}(2 nm)/Au(2 nm)/Co(0.6 nm)/Au(2 nm))_{10} multilayers was investigated. The samples were bombarded using He^+(30 keV) ions with fluences D varied from 10^{13} to 3×10^{16} He^+/cm^{2}. With increasing D the following changes in magnetic properties were observed: (i) exponential decay of the saturation field of Co layers, (ii) progressive decrease in magnetoresistance as a result of degradation of Co layers perpendicular anisotropy, (iii) linear decrease in stripe domain period with log(D).
30 keV Ga^{+} irradiation-induced changes of magnetic and magneto-optical properties of sputtered Pt/Co/Pt ultrathin trilayers films have been studied as a function of the ion fluence. Out-of-plane magnetic anisotropy states with enhanced magneto-optical effects were evidenced for specific values of cobalt thickness and irradiation fluence. Results obtained after uniform or quasi-uniform focused ion beam irradiation on either out-of-plane or in-plane magnetized sputtered pristine trilayers are compared. Similar irradiation-induced magnetic changes are evidenced in quasi-uniformly focused ion beam or uniformly irradiated films, grown either by sputtering or molecular beam epitaxy. We discuss on plausible common mechanisms underlying the observed effects.
Sputter deposited (Ni_{80}Fe_{20}/Au/Co/Au)_{10} multilayers, characterized by alternating in-plane and perpendicular anisotropies of the NiFe and Co layers, respectively, and out-of-plane stripe (labyrinth) domain structure in the Co layers, were bombarded by He^+-ions (10 keV) through a mask consisting of polystyrene nanospheres with a diameter of 470 nm. The changes of multilayers magnetic properties after ion bombardment are correlated with the used mask structure.
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