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Hot Phonons in a Biased Two-Dimensional InGaAs Channel

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Aninkevičius V., Liberis J., Matulionis A., Matulionienė I.
Acta Physica Polonica A
|
2005
|
vol. 107
|
issue 2
304-309
EN
Experimental dependence of microwave noise temperature on supplied electric power is used to estimate hot-phonon number in a modulation-doped In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As/In_{0.7} Ga_{0.3}As/In_{0.52}Al_{0.48}As two-dimensional electron gas channel (n_{2D}=2.3×10^{12} cm^{-2}). The nonequilibrium occupancy of the involved longitudinal optical phonon states exceeds the equilibrium one nearly twice at 2 kV/cm electric field.
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