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Limitations in the Tunability of the Spin Resonance of 2D Electrons in Si by an Electric Current

100%

Wilamowski Z., Malissa H., Glazov M., Jantsch W.

Acta Physica Polonica A

2007

vol. 112

issue 2

375-379

We analyse the recently observed effect of an in-plane electric current through a Si quantum well on the conduction electron spin resonance. We find that the ratio of resonance shift and current density is independent of temperature and dissipation processes, but the channel current is reduced due to a parallel electric channel in heavily modulation doped samples. The inhomogeneous current distribution results in some broadening of the ESR line width. In high mobility Si/SiGe layers the current induced increase in the electron temperature is considerably larger than the increase in the lattice temperature. The signal amplitude scales with the square of electron mobility.

Bychkov-Rashba Effect and g-Factor Tuning in Modulation Doped SiGe Quantum Wells

76%

Malissa H., Jantsch W., Mühlberger M., Schäffler F., Wilamowski Z., Draxler M., Bauer P.

Acta Physica Polonica A

2004

vol. 105

issue 6

585-590

We investigate the spin resonance of electrons in one-sided modulation doped Si_{1-x}Ge_x (x=0-10%)) quantum wells defined by Si_{0.75}Ge_{0.25} barriers. In such structures, the Bychkov-Rashba effect induces an effective magnetic field in the quantum well layer which causes anisotropy of both the g-factor and the spin coherence time. Evaluation of the Rashba coefficient as a function of x yields a monotonic increase. For x=5% the shift in the resonance field exceeds the ESR linewidth already, demonstrating the possibility to use this effect for g-factor tuning to select individual spins in an ensemble.

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2 Acta Physica Polonica A

1 2007

1 2004

2 Jantsch W.

2 Malissa H.

2 Wilamowski Z.

1 Bauer P.

1 Draxler M.

1 Glazov M.

1 Mühlberger M.

1 Schäffler F.

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Limitations in the Tunability of the Spin Resonance of 2D Electrons in Si by an Electric Current

Bychkov-Rashba Effect and g-Factor Tuning in Modulation Doped SiGe Quantum Wells