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vol. 126
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issue 4a
A-130-A-133
EN
The interplay between the quantum size effect and superconductivity in the metallic Al nanofilms has been studied with the use of the self-consistent numerical solutions of the Bogoliubov-de Gennes equations. We have shown that the critical temperature of the metallic nanofilm oscillates as a function of the nanofilm thickness. This phenomenon results from the quasi-particle energy quantization induced by the confinement of electrons in the direction perpendicular to the film. For the ultrathin nanofilms with thickness 1-2 nm we have found that the critical temperature increases up to value several times higher as compared to the one measured in the bulk.
EN
The spin-dependent electronic transport is investigated in a paramagnetic resonant tunnelling diode formed from Zn_{1 - x}Mn_{x}Se quantum well between two ZnBeSe barrier layers. The spin-dependent current-voltage characteristics have been obtained in the presence of magnetic fields by solving the quantum kinetic equation for the Wigner distribution function and the Poisson equation in the self-consistent procedure. We have obtained two distinct current peaks due to the giant Zeeman splitting of electronic levels in a qualitative agreement with experiment. We have shown that the sign of spin current polarization can be reversed by tuning the bias voltage. Moreover, we have found the bias voltage windows with a nearly constant polarization.
EN
The influence of the applied gate voltage on the coherent propagation of the conduction electrons through the InGaAs/InP core-multishell nanowires with the surrounding gate is considered. The solution of the three-dimensional Schrödinger equation within the effective mass approximation is found using the adiabatic method. The electrostatic potential distribution generated by the all-around gate is determined from the self-consistent procedure applied to the Schrödinger-Poisson problem. The Landauer-Büttiker formalism and quantum transmission boundary method are applied to calculate the transport properties of the considered nanosystem.
EN
The non-classical distribution function formalism is used for studying the electron transport in a nanosystem. We calculated the current-voltage characteristics of a triple barrier one-dimensional nanostructure which is connected to three-dimensional (highly doped semiconductor) reservoirs by the ohmic contacts. We also estimated the peak-to-valley ratio for the considered nanostructure and discussed the effect of switching the bias from peak-to-valley and from valley-to-peak voltages.
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51%
EN
Using the computer simulations we have studied the spin conductance of the InAs nanowire with three all-around gates that generate two coupled quantum dots in the nanowire. We have assumed that the same constant voltage is applied to the outermost (left and right) gates and investigated the effect of the varying central-gate voltage (V_{G}) and axially directed magnetic field B on the spin currents. The calculated spin-up and spin-down conductances exhibit pronounced oscillations as functions of V_{G}. In certain intervals of V_{G}, both the spin conductances oscillate in antiphase, which can be applied to the spin-filter operation.
EN
Calculations of the quantum correction to the DC conductance of a cylindrical nanowire due to the quantum interference are presented. The real space Cooperon equation is solved for cylindrical geometry. Using this approach, it is shown that the quantum correction to the conductance in the weak localisation regime depends not only on the dephasing processes but also on geometrical parameters of the nanowire.
EN
Calculations of the current-voltage characteristics of the core-multishell nanowires for different radii of the core and various thicknesses of the shells are presented. A role of the conducting core and shells in the coherent transport under the influence of the gate voltage is discussed.
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Superconductivity in Indium Diffused GaAs

33%
EN
Superconductivity of indium diffused GaAs was investigated. The superconductivity in these samples was identified by the magnetic susceptibility and the characteristic field modulated microwave absorption. The static magnetic susceptibility was measured from 40 K down to 2.5 K. The result shows two distinctive diamagnetic contributions within 7 K-2.5 K range. These diamagnetic contributions were correlated with the excess of In and Ga metal in GaAs.
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