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Anomalous Galvanomagnetic Effects in InSb Thin Films with Superconducting Lead Inclusions

100%
Mironov O., Nashchekina O., Oszwaldowski M., Berus T.
Acta Physica Polonica A
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1993
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vol. 83
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issue 2
227-230
EN
We report on the first experimental observations of an anomalous increase in the resistance of a semiconductor-super conductor contact in the vicinity of the critical temperature T_{c}. The effect is found in lead-doped InSb thin films having inclusions of lead of 1-3 μm in diameter: The observed effect can be a model that explains similar resistance increase observed sometimes in the high T_{c} superconductors.
2
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Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface

76%
Sadeghzadeh M., Mironov O., Emeleus C., Parry C., Phillips P., Parker E., Whall T.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
503-508
EN
We have studied the transport properties of a two-dimensional hole gas (2DHG) at the inverted interface of a strained Si_{0.8}Ge_{0.2} quantum well. By application of a bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n_{s} can be controlled, in the range of (1.5-5.2)×10^{11} cm^{-2}. At a temperature T=0.33 K, the Hall mobility is 4650 cm^{2} V^{-1} s^{-1} at the maximum carrier density. For lower sheet densities (n_{s}<2×10^{11} cm^{-2}) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Haas oscillation measurements we have extracted the hole effective masses m*=(0.25 → 0.28)m_{0} and the ratio of transport to quantum lifetimes α=(0.92 → 0.85) for the corresponding carrier density change of n_{s}=(5.2 → 2.5)×10^{11} cm^{-2}. These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n_{s}, short range interface charge and interface roughness scattering.
3
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Energy Spectrum in Quantum Dots of Lead and Tin Chalcogenides Semiconducting Compounds

76%
Dugaev V., Litvinov V., Petrov P., Mironov O., Nashchekina O., Oszwałdowski M.
Acta Physica Polonica A
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1992
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vol. 82
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issue 5
797-800
EN
The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calculations of the energy levels as functions of the dot radius are performed. When the anisotropy of the bare energy spectrum is strong, the energy levels are calculated using Fal'kovskii's adiabatic approximation for multiband systems. When the quantum dot material has an inverted band gap with respect to the host, the low-energy states within the fundamental gap are shown to arise.
4
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Optical Study of MBE Grown Undoped Si-Si_{1-x}Ge_{x}/Si Superlattices

76%
Gnezdilov V., Mironov M., Yshakov V., Mironov O., Phillips P., Parker E.
Acta Physica Polonica A
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1996
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vol. 90
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issue 5
1045-1049
EN
Raman spectroscopy and spectroscopic ellipsometry have been used to characterize Si/Si_{0.78}Ge_{0.22} superlattices grown by molecular beam epitaxy on (001)Si at different substrate temperatures. The results are interpreted to give information on material and interface quality, layer thicknesses, and state of strain. The observed frequencies of zone-folded longitudinal acoustic phonons in a high quality sample agree well with those calculated using Rytov's theory of acoustic vibrations in layered media.
5
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Anisotropic Microwave Absorption in High-T_{c} like Semiconductor Superconducting Superlattices (001) PbTe-PbS

76%
Mironov O., Makarovskii O., Fedorenko A., Sipatov A., Nashchekina O., Zaritskii I., Konchits A.
Acta Physica Polonica A
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1994
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vol. 85
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issue 3
603-606
EN
The anisotropic microwave absorption in the presence of alternative magnetic field has been studied for the first time in superconducting super-lattices based on PbTe-PbS, which are layered anisotropic systems similar to high T_{c} superconductors. A new method of study has been used. The microwave response was detected under broad-band conditions and compared with the results of synchronous detection. All the features which have been observed in high T_{c} materials are clearly seen here.
6
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Superconductivity of Non-Strained PbTe-PbS and Strained PbTe-SnTe Superlattices

64%
Mironov O., Chistyakov S., Fedorenko A., Shpakovskaya L., Sipatov A., Savitskii B., Nashchekina O., Oszwałdowski M.
Acta Physica Polonica A
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1991
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vol. 80
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issue 3
329-332
EN
A comparative study of structural and superconductive properties of semi conductor epitaxial superlattices PbTe-SnTe and PbTe-PbS grown on (001) KCl has been carried out. It has been found that the superconductivity of the PbTe-SnTe superlattices is caused by the stretching strain in the SnTe layers and it may be connected with the relative positions of L^{+}_{8} and L^{+}_{6} terms of PbTe and SnTe, respectively in the heterojunction. In contrast to the PbTe-SnTe superlattices, the superconductivity of the PbTe-PbS super lattices is found to be associated with regular misfit dislocation grids which are generated at the interfaces.
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