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Doped Carrier Formulation of the t-J model: Monte Carlo Study of the Anisotropic Case

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Ferraz A., Kochetov E., Maśka M., Mierzejewski M.
Acta Physica Polonica A
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2008
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vol. 114
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issue 1
185-189
EN
We derive a doped carrier representation of the t-J model Hamiltonian. Within this approach the t-J model is described in terms of holes hopping in a lattice of correlated spins, where holes are the carriers doped into the half-filled Mott insulator. This representation of the t-J Hamiltonian is very convenient for underdoped systems since close to half-filling it allows for a controlled treatment of the crucial constraint of no doubly occupied sites. When neglecting the transverse spin-spin interaction, the effective Hamiltonian can be investigated with classical Monte Carlo simulations. We discuss the results obtained for systems consisting of several hundred lattice sites.
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