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We compare the results of electrically detected magnetic resonance in a 2D electron gas in Si/SiGe quantum wells with transport and magnetic resonance measurements on ferromagnetic Ga_{1-x}Mn_xAs. The results lead us to the conclusion that observation of electrically detected magnetic resonance is possible only in the case of a slow spin relaxation, where the microwave resonant absorption leads to a noticeable change of spin magnetization.
EN
Molecular beam epitaxy grown Ga_{1-x}Mn_xAs layers were investigated by means of magnetic resonances. With an increase in Mn concentration, x, the spectrum changes from the (i) paramagnetic one, with resolved fine and hyperfine structures, typical of S=5/2 spin of substitutional Mn^{2+} ions, for very diluted alloy, via (ii) paramagnetic spectrum, where the fine and hyperfine structures are averaged by a long range Mn^{2+}-Mn^{2+} exchange coupling, (iii) single, isotropic line of ferromagnetic resonance. Insulator to metal transition is accompanied with occurrence of (iv) a very complex spectrum of the ferrimagnetic resonance, accompanied with the well-resolved spin wave resonance. Reentrance to insulator phase for the most condensed alloys is accompanied with the reentrance to (v) ferromagnetic phase. The data confirm that the effective mass holes transfer the exchange interaction between localized Mn^{2+} spins.
EN
Different types of magnetic resonance observed in Ga_{1-x}Mn_xAs reflect three different magnetic phases: para-, ferro-, and ferrimagnetic. Ferromagnet is characterized by single isotropic resonance line. A complex spectrum in ferrimagnet can be described by g factor equal to 1.44 and a sum of an axial and cubic anisotropy field. The axial field is by an order of magnitude greater than the cubic one. The complex structure of ferrimagnetic resonance is attributed to spin-wave resonance. Quantitative analysis of the dispersion of spin wave shows that the range of exchange coupling is very long, of the order of 25 nm, while spin-wave stiffness and the total exchange field are very small. The exchange field as evaluated from spin wave is by two orders of magnitude smaller than the Zener field corresponding to the critical temperature.
EN
Monocrystalline thin layers of (Eu,Gd)Te, n-type ferromagnetic semiconductor, were grown by molecular beam epitaxy technique on BaF_2 (111) substrates. Reflection high-energy electron diffraction, X-ray diffraction, and atomic force microscopy characterization proved epitaxial mode of growth and high crystal quality of the layers. Magnetic susceptibility and magnetic resonance measurements showed that in (Eu,Gd)Te layers ferromagnetic transition takes place at about 13 K. Electrical characterization carried out by the Hall effect and resistivity measurements revealed very high electron concentration of 10^{20}~cm^{-3} and sharp maximum of resistivity at transition temperature.
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