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1
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Passivation of defect states in surface and edge regions on pn-junction Si solar cells by use of hydrogen cyanide solutions

100%
Takahashi M., Shishido T., Iwasa H., Kobayashi H.
Open Physics
|
2009
|
vol. 7
|
issue 2
227-231
EN
The local photovoltage of the pn-junction single-crystalline silicon solar cells observed by spot light scanning gradually decreases in the vicinity of edges. The energy conversion efficiency is increased by shadowing the edge regions where the local photovoltage is lower, showing that the defect density is high in the edge regions. From the analysis of the local photovoltage, the spacial distribution of defect states is obtained. The cyanide method, i. e., immersion of solar cells in HCN solutions at room temperature, increases the local photovoltage and increases the energy conversion efficiency.
2
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Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature

100%
Iwata T., Matsumoto T., Terakawa S., Kobayashi H.
Open Physics
|
2010
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vol. 8
|
issue 6
1015-1020
EN
A thick Al2O3/aluminum (Al) structure has been fabricated by oxidation of Al with 68wt% and 98wt% nitric acid (HNO3) aqueous solutions at room temperature. Measurements of the Al2O3 thickness vs. the oxidation time show that reaction and diffusion are the rate-determining steps for oxidation with 68wt% and 98wt% HNO3 solutions, respectively. Observation of transmission electron micrographs shows that the Al2O3 layer formed with 68wt% HNO3 has a structure with cylindrically shaped pores vertically aligned from the Al2O3 surface to the Al2O3/Al interface. Due to the porous structure, diffusion of HNO3 proceeds easily, resulting in the reaction-limited oxidation mechanism. In this case, the Al2O3/Al structure is considerably rough. The Al2O3 layer formed with 98wt% HNO3 solutions, on the other hand, possesses a denser structure without pores, and the Al2O3/Al interface is much smoother, but the thickness of the Al2O3 layer formed on crystalline Al regions is much smaller than that on amorphous Al regions. Due to the relatively uniform Al2O3 thickness, the leakage current density flowing through the Al2O3 layer formed with 68wt% HNO3 is lower than that formed with 98wt% HNO3.
3
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Study of density of interface states in MOS structure with ultrathin NAOS oxide

88%
Jurečka S., Kobayashi H., Kim W.-B., Takahashi M., Pinčík E.
Open Physics
|
2012
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vol. 10
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issue 1
210-217
EN
The quality of the interface region in a semiconductor device and the density of interface states (DOS) play important roles and become critical for the quality of the whole device containing ultrathin oxide films. In the present study the metal-oxide-semiconductor (MOS) structures with ultrathin SiO2 layer were prepared on Si(100) substrates by using a low temperature nitric acid oxidation of silicon (NAOS) method. Carrier confinement in the structure produces the space quantization effect important for localization of carriers in the structure and determination of the capacitance. We determined the DOS by using the theoretical capacitance of the MOS structure computed by the quantum mechanical approach. The development of the density of SiO2/Si interface states was analyzed by theoretical modeling of the C-V curves, based on the superposition of theoretical capacitance without interface states and additional capacitance corresponding to the charges trapped by the interface states. The development of the DOS distribution with the passivation procedures can be determined by this method.
4
Content available remote

Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation

76%
Bury P., Kobayashi H., Takahashi M., Imamura K., Sidor P., ÄŒernobila F. e.
Open Physics
|
2009
|
vol. 7
|
issue 2
237-241
EN
Ultrathin silicon dioxide (SiO2) layers formed on Si substrate with nitric acid have been investigated using both acoustic deep-level transient spectroscopy (A-DLTS) and electrical methods to characterize the interface states. The set of SiO2/Si structures formed in different conditions (reaction time, concentrations of nitric acid (HNO3), and SiO2 thickness [3–9 nm]) was prepared. The leakage current density was decreased by post-oxidation annealing (POA) treatment at 250°C in pure nitrogen for 1 h and/or post-metallization annealing (PMA) treatment at 250°C in a hydrogen atmosphere for 1 h. All structures of the set, except electrical investigation, current-voltage (I - V), and capacitance — voltage (C - V) measurements, were investigated using A-DLTS to find both the interface states distribution and the role of POA and/or PMA treatment on the interface-state occurrence and distribution. The evident decreases of interface states and shift of their activation energies in the structures with PMA treatment in comparison with POA treatment were observed in most of the investigated structures. The results are analyzed and discussed.
5
Content available remote

On the topographic and optical properties of SiC/SiO2 surfaces

76%
Jureckova S., Jureckova M., Chovanec F., Kobayashi H., Takahashi M., Mikula M., Pina E.
Open Physics
|
2009
|
vol. 7
|
issue 2
321-326
EN
The roughness of the semiconductor surface substantially influences properties of the whole structure, especially when thin films are created. In our work 3C SiC, 4H SiC and Si/a-SiC:H/SiO2 structures treated by various oxidation a passivation procedures are studied by atomic force microscopy (AFM) and scanning tunnelling microscopy (STM). Surface roughness properties are studied by fractal geometry methods. The complexity of the analysed surface is sensitive to the oxidation and passivation steps and the proposed fractal complexity measure values enable quantification of the fine surface changes. We also determined the optical properties of oxidized and passivated samples by using visual modelling and stochastic optimization.
6
Content available remote

On formation of thin SiO2/a-Si:H interface when biased oxidized semiconductor surface interacts with plasma or liquid solution

76%
Pinčík E., Kobayashi H., Takahashi M., Brunner R., Jurečka S., Rusnák J.
Open Physics
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2007
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vol. 5
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issue 3
428-445
EN
In this paper we present the results of research into a relation(s) between the bias voltage of an oxide/a-Si:H/c-Si sample during formation of very-thin and thin oxides and the resulting distribution of oxide/semiconductor interface states in the a-Si:H band gap. Two oxygen plasma sources were used for the first time in our laboratories for formation of oxide layers on a-Si:H: i) inductively coupled plasma in connection with its application at plasma anodic oxidation; ii) rf plasma as the source of positive oxygen ions for the plasma immersion ion implantation process. The oxide growth on a-Si:H during plasma anodization is also simply described theoretically. Properties of plasmatic structures are compared to ones treated by chemical oxidation that uses 68 wt% nitric acid aqueous solutions. We have confirmed that three parameters of the oxide growth process - kinetic energy of interacting particles, UV-VIS-NIR light emitted by plasma sources, and bias of the samples - determine the distribution of defect states at both the oxide/a-Si:H interface and the volume of the a-Si:H layer, respectively. Additionally, a bias of the sample applied during the oxide growth process has a similar impact on the distribution of defect states as it can be observed during the bias-annealing of similar MOS structure outside of the plasma reactor.
7
Content available remote

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

76%
Hockicko P., Bury P., Sidor P., Kobayashi H., Takahashi M., Yanase T.
Open Physics
|
2011
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vol. 9
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issue 1
242-249
EN
A set of MOS structures with thin SiO2 layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U ac - V G curves). By comparing the A-DLTS spectra, U ac - V G characteristics and some electrical measurements (G-V, I-V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.
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