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1

35×4 Substates of DX Centers in AlGaAs:Si

100%

Ostermayer G., Brunthaler G., Stöger G., Jantsch W., Wilamowski Z.

Acta Physica Polonica A

|

1993

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vol. 84

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issue 4

765-768

EN

The measured temperature dependent free carrier concentration in AlGaAs:Si samples is compared with a model calculation where we take the full 35 × 4 alloy statistics of the DX center and potential fluctuations into account. Within this statistics we are able to describe the electron capture by a single barrier E_{B} for all Al-configurations. We compare the alloy statistics with the simple 4 × 1 statistics.

2

Strain Relaxation Induced Red Shift of Photoluminescence of CdZnSe/ZnSe Quantum Wires

100%

Straub H., Brunthaler G., Faschinger W., Bauer G., Vieu C.

Acta Physica Polonica A

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1996

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vol. 90

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issue 5

1085-1089

EN

Wire patterns (80-1000 nm) of molecular beam epitaxy grown Cd_{0.2}Zn_{0.8}Se/ZnSe quantum well were fabricated by a CH_{4}/H_{2} reactive ion etching technique. Photoluminescence emission shows with decreasing lateral size a broadening of line shape and a spectral red shift. Calculations for the change of the band gap due to strain relaxation show that this shift of the photoluminescence emission for narrow Cd_{0.2}Zn_{0.8}Se/ZnSe structures (lattice mismatch of 1.34%) can be explained by a partial elastic strain relaxation of the biaxially compressively strained Cd_{0.2}Zn_{0.8}Se quantum well after the patterning process.

3

Weak Localization and Electron-Electron Interaction in Si/SiGe Quantum Wells

86%

Prinz A., Stőger G., Brunthaler G., Bauer G., Ismail K., Meyerson B. S.

Acta Physica Polonica A

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1995

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vol. 88

|

issue 5

873-876

EN

A negative magnetoresistance is observed in Si/SiGe modulation doped heterostructures which is attributed to the single particle quantum interference (weak localization) effect. From analysis of the experimental data the electron phase coherence time τ_{ϕ} is extracted to follow a (aT + bT^{2} )^{-1} dependence. The evaluated prefactor α = 0.25 is below the theoretical limit of 0.5, but agrees with observations in Si and GaAs/AlGaAs heterostructures.

4

Electron Localization in Sb-Doped Si/SiGe Superlattices

73%

Dietl T., Jaroszyński J., Sawicki M., Głód P., Wróbel J., Stöger G., Brunthaler G., Bauer G., Schäffler F.

Acta Physica Polonica A

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1995

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vol. 88

|

issue 4

699-702

EN

Millikelvin studies of in-plane magnetoconductance in short period Si/Ge:Sb superlattices have been carried out in order to examine the effect of anisotropy on quantum localization. The field-induced metal-to-insulator transition has been observed, indicating the existence of extended states. This suggests that despite anisotropy as large as D_{∥}/D_{⊥} ≈ 10^{3} the system behaves as 3D in respect of localization by disorder.

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4 Acta Physica Polonica A

1 1996

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4 Brunthaler G.

3 Bauer G.

2 Stöger G.

1 Dietl T.

1 Faschinger W.

1 Głód P.

1 Ismail K.

1 Jantsch W.

1 Jaroszyński J.

1 Meyerson B. S.

1 Ostermayer G.

1 Prinz A.

1 Sawicki M.

1 Schäffler F.

1 Straub H.

1 Stőger G.

1 Vieu C.

1 Wilamowski Z.

1 Wróbel J.

35×4 Substates of DX Centers in AlGaAs:Si

Strain Relaxation Induced Red Shift of Photoluminescence of CdZnSe/ZnSe Quantum Wires

Weak Localization and Electron-Electron Interaction in Si/SiGe Quantum Wells

Electron Localization in Sb-Doped Si/SiGe Superlattices