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Acousto-Optic Diffraction by Shear Horizontal Surface Acoustic Waves in 36° Rotated Y-Cut X-Propagation Lithium Tantalate

100%
Rimeika R., Čiplys D., Shur M.
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EN
We have investigated the acousto-optic diffraction by shear horizontal surface acoustic waves in 36° rotated Y-cut X-propagation lithium tantalate (LiTaO_{{3}}) crystals. The measurements were performed at the optical wavelength 633 nm of He-Ne laser and acoustic wavelengths of 50-60 μ m. The anisotropic diffraction with the light polarization rotation in the transmission mode was observed. The measured and calculated values of the light incidence angle corresponding to the strongest diffraction differed significantly. A narrow strip of a thin metal film deposited on the crystal surface drastically affected the light diffraction. We attribute these effects to the conversion processes between the shear horizontal leaky surface acoustic wave and shear horizontal surface skimming bulk wave.
2
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Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells

76%
Mickevičius J., Tamulaitis G., Kuokštis E., Shur M., Yang J., Gaska R.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1247-1252
EN
Dynamics of nonequilibrium carriers in high-Al-content AlGaN/AlGaN multiple quantum wells was studied. A set of multiple quantum wells with well widths varying from 1.65 to 5.0 nm was grown by metal-organic chemical vapor deposition. The structures were investigated by photoluminescence spectroscopy under quasi-steady-state conditions. The observed blueshift of the photoluminescence band peak was attributed to the screening of the built-in electric field. The integrated photoluminescence intensity dependence on excitation and temperature showed a strong influence of carrier localization.
3
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Luminescence Decay Kinetics in GaN Studied by Frequency Domain Measurements

64%
Mickevičius J., Vitta P., Tamulaitis G., Žukauskas A., Shur M., Zhang J., Yang J., Gaska R.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
833-837
EN
Carrier dynamics in high-quality GaN epilayer was investigated at two extreme excitation levels. Carrier lifetime under high excitation conditions was estimated by using light-induced transient grating technique. Measurements at extremely low excitation power density were performed by using frequency-domain fluorescence lifetime technique. The study was performed in a wide temperature range from 8 to 300 K. The results revealed the influence of donor-acceptor pair recombination and carrier trapping processes.
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