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Mechanism of Carrier Heating in High Electric Field Electroluminescence Devices

100%
Dedulewicz S., Godlewski M.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 5
865-867
EN
The mechanism of carrier heating in ZnS-based electroluminescence devices is discussed. We show that carrier acceleration by an applied electric field is at 300 K not a loss-free (ballistic carriers) process. Even for large carrier energies (about 2.5 eV) inelastic scattering on polar optical phonons dominates over elastic scattering on acoustic phonons and ionized impurities.
2
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Carrier Heating Efficiency in Optically Detected Cyclotron Resonance Experiment

100%
Dedulewicz S., Godlewski M.
Acta Physica Polonica A
|
1993
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vol. 84
|
issue 3
535-537
EN
Monte Carlo calculations of carrier heating efficiency in optically detected cyclotron resonance experiment are presented. It is shown that electrons accelerated by microwave electric field gain energy sufficient for impact ionization of shallow centers and for exciton dissociation. It is also explained why very sharp thresholds for impact processes were observed in the optically detected cyclotron resonance investigations.
3
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Electron-Electron Scattering Influence on Hot Electron Transport in Semiconductors

100%
Dedulewicz S., Kancleris Ž.
Acta Physica Polonica A
|
1991
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vol. 80
|
issue 3
353-356
EN
Electron-electron scattering has been shown to manifest itself when scattering by optical phonons is of importance. The strongest influence has been observed in the slightly heated electron system at the lattice temperature T ≈ T_{0}/5 (T_{0} being the characteristic temperature of optical phonon).
4
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Hot Carrier Effects in Optically Detected Cyclotron Resonance Studies of III-V Semiconductors

81%
Karpińska K., Dedulewicz S., Godlewski M.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 4
623-626
EN
The mechanisms of irregular photoluminescence intensity oscillations, as observed in optically detected cyclotron resonance experiments, are discussed. Two possible scenarios are analyzed, both requiring impact ionization of the center(s) by electric field accelerated free carriers. The first assumes coexistence of dielectric and energy relaxation processes. The second assumes a subsequent impact ionization of two different centers.
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