The electron movement in thin semiconductor layer adjoining interface semiconductor-insulator in metal-insulator-semiconductor (MIS) microstructure with periodic field electrodes is considered. If a voltage of some sufficiently high frequency is applied to such a structure the effect of this high frequency field on a charge carriers in semiconductor is equivalent, in a sense, to the effect of some time-independent effective potential which is a sequence of deep "dynamic" quantum wells, where the charge carriers are localized. It is shown that the electron resonant tunneling may occur in this structure.
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.