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Low Temperature Transport and Magnetic Properties of SmB_{6}

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Gabani S., Flachbart K., Pavlík V., Konovalova E., Paderno Y., Herrmannsdörfer T.

Acta Physica Polonica A

2000

vol. 97

issue 3

419-422

We present results of transport and magnetic properties of three single-crystalline samples of the intermediate valence small-gap semiconductor SmB_{6} at low temperatures. The received resistivity dependences of the samples below 0.5 K exhibit an activated behavior with an energy gap of a few mK. The temperature dependences of the magnetic susceptibility show an increase below 15 K which can be accounted for by impurities, by bare Sm^{3+} ions or by a small amount of in-gap magnetic 4f^{5}5d^{1} states.

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1 Acta Physica Polonica A

1 2000

1 Flachbart K.

1 Gabani S.

1 Herrmannsdörfer T.

1 Konovalova E.

1 Paderno Y.

1 Pavlík V.

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Low Temperature Transport and Magnetic Properties of SmB_{6}