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Magnetic Susceptibility of Sn_{1-x}Au_{x}Te

100%
EN
The magnetic susceptibility of Bridgman-grown Sn_{1-x}Eu_{x}Te with nominal values of x up to 0.095 was measured over a temperature range from 2 to 385 K. The samples were p-type with hole concentrations up to 1.5 × 10^{21} cm^{-3}. The susceptibility data above 50 K followed the Curie-Weiss relation with a small Curie temperature. At about 10 K a small cusp in susceptibility was observed in samples with the higher range of x values. The data indicate a presence of both antiferromagnetic and ferromagnetic exchange interactions, with some paramagnetic contributions from charged defects. There is also evidence of Eu going into the lattice both as Eu^{2+} and Eu^{3+} ions.
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Magnetization and Susceptibility of Cd_{1-x}Co_{x}Se

88%
EN
The magnetization and magnetic susceptibility of Bridgman-grown Cd_{1-x}Co_{x}Se with values of x up to 0.04 have been measured over a temperature range from 2 to 390 K and in magnetic fields up to 23 T. A pair-exchange value J/k_{B} of about -3 K was obtained from the magnetic field dependence of the magnetization. This exchange is probably due to the next-nearest-neighbor interaction. The high-temperature susceptibility data indicated a presence of the Curie-Weiss like paramagnetism and the temperature independent Van Vleck type paramagnetism.
3
76%
EN
The temperature dependence of the magnetic specific heat was studied experimentally and theoretically in the semimagnetic semiconductor Pb_{1-x}Eu_xTe for x=0.027 and x=0.073, over the temperature range from 0.5 K to 15 K, in magnetic fields up to 2 T. In zero magnetic field at about 2 K there was a broad maximum in the magnetic specific heat, which was much higher than that predicted by the model of superexchange interaction between nearest neighbors; the maximum values increased with magnetic field. The experimental data were analyzed in the framework of a model which takes into account the spin splitting of the ground state of a single Eu2+ ion in the presence of local lattice distortions in the Pb_{1-x}Eu_xTe mixed crystal. The model describes well the experimental data, especially for lower x-values, where the contribution from singlets dominates.
4
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High Field Magnetization of Sn_{1-x}Gd_{x}Te

76%
EN
The magnetization of p-type Sn_{1-x}Gd_{x}Te with x up to 0.045 and the hole concentration, p, varying from 2.7 to 8.3×10^{20} cm^{-3} has been measured in magnetic fields up to 27 T, at the temperatures 4.2 and 1.3 K. The data were fitted to a magnetization equation with single-ion and pair terms. From comparison of the exchange parameters determined from the high-field magnetization with those previously obtained from the high-temperature magnetic susceptibility it was found that in samples with p>5×10^{20} cm^{-3} the exchange was of a short-range type, while in samples with a lower carrier concentration the long-range exchange mechanism was observed.
EN
We present preliminary studies of magnetic properties of Ge_{1-x}Cr_{x}Te semimagnetic semiconductors with low chromium content x < 0.026. The static and dynamic magnetometry techniques were employed for the current investigations. The obtained results showed large bifurcations between zero-field cooled and field cooled magnetization curves at temperatures lower than 50 K. The dynamic susceptibility measurements proved via frequency shifting of the peaks that the observed magnetic order at low temperatures was the spin-glass-like state caused by magnetic frustration of the system.
EN
We present the studies of magnetic and transport properties of the bulk Zn_{1-x}(Mn, Co)_xGeAs_2 mixed crystals with 0.052 ≤ x ≤0.182 grown using direct fusion method. Magnetic investigations showed that for samples with x ≥ 0.078 we observed a behavior typical of ferromagnets, with the Curie temperatures T_C ≥ 300 K. The observed ferromagnetism was probably connected with the spinodal decomposition of the Mn ions in the alloy. The transport studies including resistivity and Hall effect (at B=1.4 T) were performed. The samples showed p-type conductivity with semiconducting or metallic character, depending on the alloy composition. The Hall carrier concentration, p ≥ 10^{18} cm^{-3}, was composition dependent.
EN
We present the experimental evidence for the presence of spinodal decomposition of the magnetic ions in the Ge_{1-x-y}Cr_{x}Eu_{y}Te samples with chemical composition varying in the range of 0.015 ≤ x ≤ 0.057 and 0.003 ≤ y ≤ 0.042. The ferromagnetic transition at temperatures 50 ≤ T ≤ 57 K was observed, independent of the chemical composition. The long-range carrier mediated itinerant magnetic interactions seem to be responsible for the observed ferromagnetic order. The magnetic irreversibility with coercive field H_C = 5 - 63 mT and the saturation magnetization M_S ≈ 2 - 6 emu/g are found to strongly depend on the chemical composition of the alloy.
EN
Magnetization of 1 μm thick ferromagnetic IV-VI (Ge, Mn)Te semiconductor layers with 10 at.% of Mn was studied by SQUID magnetometry method up to the magnetic fields of 70 kOe. The layers were grown on BaF₂ (111) substrates by molecular beam epitaxy with varying Te molecular flux, which permitted the control of layer stoichiometry and conducting hole concentration. X-ray diffraction and in situ electron diffraction characterization of layer growth and crystal structure revealed two-dimensional mode of growth and monocrystalline rhombohedral crystal structure of (Ge, Mn)Te layers. Controlling the layer stoichiometry influences the temperature dependence of magnetization with the ferromagnetic Curie temperature varying in Ge_{0.9}Mn_{0.1}Te layers from T_c=30 K (low Te flux) to T_c=42 K (high Te flux).
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