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1

Structure Perfection Diagnostics of Single Crystals by Means of Diffractometry Measurements Using X-Ray Continuous Spectrum

100%

Datsenko L. I., Khrupa V. I.

Acta Physica Polonica A

|

1994

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vol. 86

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issue 4

579-584

EN

Determination of the integral characteristics of structural perfection of a real crystal (i.e. Debye-Waller's static factor e^{-L} and coefficient of absorption lids due to diffuse scattering) is especially expedient using the suitably selected wavelengths of the X-ray continuous spectrum by investigation of the thickness I(t), coordinate I(x) as well as amplitude I(W) dependencies of intensities at Lane or Bragg diffraction. Here W is an amplitude of weak ultrasound vibrations excited in a sample for suppression of the Bragg component of reflectivity.

2

Structure Perfection Study of Crystals Containing Micro- and Macrodistortions by X-Ray Acoustic Method

81%

Khrupa V. I., Grigoryev D. O., Dzyublik A. Y.

Acta Physica Polonica A

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1994

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vol. 86

|

issue 4

597-603

EN

The X-ray acoustic method for determination the structure perfection integral characteristics is suggested for slightly imperfect dislocation-free crystals. The method is suitable for investigation of a crystal disturbed both by localized (microdefects) and by distributed (macrostrains) structure defects. It is based on the analysis of dependence of the distance Δx between two minima, arising in the spatial intensity profile I(x) of the X-ray beam diffracted by acoustically excited crystal, upon ultrasound frequency vs. Using the data Δx(v_{s}) for two selected reflections, we calculated the values of the extinction lengths Λ which enabled us to identify the predominate type of structure disturbances as well as to estimate the static Debye-Waller factors e^{-L} and the period of the main macrodeformation λ_{M} for a sample containing simultaneously microdefects and periodic long range deformations. Such approach was used for studying the structure perfection of Czochralski-grown (Cz) and float-zone (FZ) silicon crystals.

3

Influence of Preannealing on Perfection of Czochralski Grown Silicon Crystals Subjected to High Pressure Treatment

71%

Datsenko L. I., Misiuk A., Härtwig J., Briginets A., Khrupa V. I.

Acta Physica Polonica A

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1994

|

vol. 86

|

issue 4

585-590

EN

The effect of high temperature (up to 1120°C)-high pressure (up to 1.1 GPa) treatment on the resulting defect structure of preannealed (450-725°C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic displacement due to defects were determined for various Lane reflections. Well-defined development of the cluster like defect structure after high temperature pressurization depending to a substantial extent on the preannealing conditions was observed.

4

Rapid Structure Perfection Diagnostics of GaAs Single Crystal by Diffraction of White X-Ray Radiation

71%

Khrupa V. I., Grigoryev D. O., Skorokhod M. Y., Datsenko L. I., Bąk-Misiuk J.

Acta Physica Polonica A

|

1994

|

vol. 86

|

issue 4

591-597

EN

Sensitivity of X-ray integral reflectivity of GaAs single crystal to a degree of structure distortions was established to grow considerably in the Bragg diffraction case when the characteristic AgK_{α_{1}} line is changed for more hard white radiation. In effect, the absorption length essentially exceeds the extinction length what results in enhancement of incoherent scattering. Measurements of X-ray integral reflectivity coordinate dependence by single crystal spectrometer permitted to determine the mean level of crystal lattice distortion as well as the degree of structure homogeneity of a sample with dislocations. The Debye-Waller static factor value was estimated from X-ray integral reflectivity magnitudes for the 800 reflection of white radiation.

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4 Acta Physica Polonica A

4 1994

4 Khrupa V. I.

3 Datsenko L. I.

2 Grigoryev D. O.

1 Briginets A.

1 Bąk-Misiuk J.

1 Dzyublik A. Y.

1 Härtwig J.

1 Misiuk A.

1 Skorokhod M. Y.

Structure Perfection Diagnostics of Single Crystals by Means of Diffractometry Measurements Using X-Ray Continuous Spectrum

Structure Perfection Study of Crystals Containing Micro- and Macrodistortions by X-Ray Acoustic Method

Influence of Preannealing on Perfection of Czochralski Grown Silicon Crystals Subjected to High Pressure Treatment

Rapid Structure Perfection Diagnostics of GaAs Single Crystal by Diffraction of White X-Ray Radiation