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Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime

100%

Buyanov A. V., Holtz P. O., Pozina G., Monemar B., Thordson J., Andersson T. G.

Acta Physica Polonica A

1997

vol. 92

issue 4

727-732

We report results for Si layers embedded in GaAs, extending from the delta-doped (δ-doped) range up to 6 monolayers derived by means of variable temperature resistivity and Hall effect measurements, secondary ion mass spectrometry and high resolution X-ray diffractometry techniques. The conductivity transition from free carrier transport in ordered δ-layers (<1 ML) to strongly-localized two-dimensional variable range hopping transport under potential fluctuation disordered conditions (>4 ML) is clearly observed. This observation is in good agreement with the secondary ion mass spectrometry and high resolution X-ray diffractometry data. Results from the intermediate case with 2-3 MLs are also discussed.

AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency

84%

Shevchenko E., Toropov A., Nechaev D., Jmerik V., Shubina T., Ivanov S., Yagovkina M., Pozina G., Bergman J., Monemar B.

vol. 126

issue 5

1140-1142

We report on optical studies of exciton localization and recombination kinetics in two single 2.2 nm thick Al_{x}Ga_{1-x}N/Al_{x+0.1}Ga_{0.9-x}N quantum well structures (x=0.55 and 0.6) grown by plasma assisted molecular beam epitaxy on a c-sapphire substrate. Strong localization potential inherent for both the quantum well and barrier regions results in merging of the quantum well and barrier emission spectra into a single broad line centered at 285 nm (x=0.55) and 275 nm (x=0.6). Time-resolved photoluminescence measurements revealed surprising temperature stability of the photoluminescence decay time constant ( ≈ 400 ps) relevant to the recombination of the quantum well localized excitons. This observation implies nearly constant quantum efficiency of the quantum well emission in the whole range from 4.6 to 300 K.

Optical Studies of Thermally Activated Vertical Hole Transport in ZnCdSe/ZnSSe Superlattice

84%

Lebedev A., Sorokin S., Toropov A., Shubina T., Il'inskaya N., Nekrutkina O., Ivanov S., Pozina G., Bergman P., Monemar B.

Acta Physica Polonica A

1998

vol. 94

issue 3

421-426

Miniband transport in alternatively-strained ZnCdSe/ZnSSe short period superlattices is investigated using a structure with an enlarged quantum well. Temperature dependences of time-resolved and continuous wave photoluminescence have been measured, demonstrating an efficient temperature-induced vertical hole transport. A quantitative description is given for the carrier kinetics in these structures.

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3 Acta Physica Polonica A

1 2014

1 1998

1 1997

3 Monemar B.

3 Pozina G.

2 Ivanov S.

2 Shubina T.

2 Toropov A.

1 Andersson T. G.

1 Bergman J.

1 Bergman P.

1 Buyanov A. V.

1 Holtz P. O.

1 Il'inskaya N.

1 Jmerik V.

1 Lebedev A.

1 Nechaev D.

1 Nekrutkina O.

1 Shevchenko E.

1 Sorokin S.

1 Thordson J.

1 Yagovkina M.

Search results

Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime

AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency

Optical Studies of Thermally Activated Vertical Hole Transport in ZnCdSe/ZnSSe Superlattice