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Formation of Submicron n^{+}-Layers in Silicon Implanted with H^{+}-Ions

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Pokotilo Y., Petukh A., Giro A., Węgierek P.

Acta Physica Polonica A

2011

vol. 120

issue 1

129-132

Formation of submicron n^{+}-layers in commercial Pd-Si Schottky diodes with the active base region fabricated on epitaxial phosphorus-doped silicon, implanted with 300 keV hydrogen ions and thermally treated in the temperature range 20-450°C, is studied. Standard C-V measurements and deep level transient spectroscopy were used. It is shown that formation of n^{+}-layers at the end of projective range of ions was caused by producing of hydrogen-related donors of two types, one of them is bistable. The kinetics of their accumulation is described by the first-order reaction with the following values of parameters for bistable and not transforming H-donors: the activation energy Δ E_1 = 2.3 eV, the pre-exponential factor τ_{01} = 9.1 × 10^{-17} s, the ultimate concentration N_{01} = (1 ± 0.1) × 10^{16} cm^{-3}; Δ E_2 = 1.4 eV, τ_{02} = 4.2 × 10^{-9} s, N_{02} = (3 ± 0.1) × 10^{16} cm^{-3}. Correlation between processes of transformation of post-implantation radiation defects and hydrogen-related donors formation was identified.

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1 Acta Physica Polonica A

1 2011

1 Giro A.

1 Petukh A.

1 Pokotilo Y.

1 Węgierek P.

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Formation of Submicron n^{+}-Layers in Silicon Implanted with H^{+}-Ions