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AC-Conductivity of Thin Polycrystalline Tin Dioxide Films

100%
Ksenevich V., Gorbachuk N., Dauzhenka T., Bashmakov I., Poklonski N., Wieck A.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
146-147
EN
The electrical properties of polycrystalline tin dioxide films were investigated by impedance spectroscopy in the frequency range 100 Hz-1 MHz at temperatures 4.2 K, 77 K and 300 K. Analysis of the experimental data by means of complex nonlinear least squares method made it possible to divide the contributions of grain bulk and grain boundaries to the conductivity. It was found that at room temperature charge transport processes are mainly determined by the grain volume while at the low temperatures contribution from the grain boundaries to the impedance of the system prevails.
2
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Current-Voltage Characteristic Features of Diodes Irradiated with 170~MeV Xenon Ions

84%
Poklonski N., Gorbachuk N., Nha V., Tarasik M., Shpakovski S., Filipenia V., Skuratov V., Wieck A., Kołtunowicz T.
Acta Physica Polonica A
|
2013
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vol. 123
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issue 5
926-928
EN
Diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Xenon ions were implanted into the diodes from the side of the p^{+}-region (implantation energy 170 MeV, fluence Φp from 5 × 10^7 to 10^9 cm^{-2}). It is shown that the formation of a continuous irradiation damaged layer with the thickness of the order of magnitude of the average projective range creates prerequisites for the negative differential resistance in the current-voltage characteristics of the irradiated diodes.
3
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Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p^{+}n-Diodes

84%
Poklonski N., Gorbachuk N., Tarasik M., Shpakovski S., Filipenia V., Skuratov V., Wieck A., Kołtunowicz T.
Acta Physica Polonica A
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2011
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vol. 120
|
issue 1
111-114
EN
The diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Krypton ions are implanted to the side of the p^{+}-region of diodes (energy 107 MeV, fluence Φp from 5 × 10^7 to 4 × 10^9 cm^{-2}). It is shown that recovery charge Q_{rr} is inversely proportional to the square root of the irradiation fluence value Φp. When the fluence increases, the part of the recovery charge Q_{rrA}, due to the high reverse conductance phase, decreases faster than the value Q_{rr}.
4
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Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

84%
Poklonski N., Gorbachuk N., Nha V., Shpakovski S., Filipenya V., Skuratov V., Kołtunowicz T., Kukharchyk N., Becker H., Wieck A.
Acta Physica Polonica A
|
2015
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vol. 128
|
issue 5
891-893
EN
Silicon diodes irradiated with helium ions with energies of 4.1, 6.8 and 8.9 MeV are studied. It is shown that the mechanism determining the behaviour of frequency dependence of complex electric module and correspondingly the behavior of impedance of diodes irradiated with helium ions in the frequency region 3-200 kHz is a recharging of vacancy complexes localized in the space charge region.
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