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1
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Monte Carlo Simulation of Noise and THz Generation in InP FET at Excess of Electrons in Channel

100%
Gružinskis V., Shiktorov P., Starikov E.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
215-217
EN
Electron transport and drain current noise in field effect transistor with n^+ nn^+ InP channel have been studied by Monte Carlo particle simulation which simultaneously solves the Boltzmann transport and pseudo-2D Poisson equations. It is shown that at gate voltages giving excess electron concentration in n-region of channel the drain current self-oscillations in THz frequency range are possible. The self-oscillations are driven by electron plasma instability.
2
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Small and Large Signal Analysis of Terahertz Generation from InN n^+nn^+ Structures with Free-Carrier Grating

100%
Gružinskis V., Shiktorov P., Starikov E.
Acta Physica Polonica A
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2005
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vol. 107
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issue 1
163-168
EN
Electron transport in long (up to 15μm) InN n^+nn^+ structures is theoretically investigated by the Monte Carlo particle technique at low lattice temperatures when optical phonon emission is the dominating scattering mechanism. It is shown that at constant bias a free-carrier grating can be formed inside the n-region. Such a grating is found to be responsible for microwave power generation in the THz frequency range. The generation mechanism is similar to that in submicron n^+nn^+ structures under quasiballistic transport conditions.
3
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Analysis of Conditions for Free-Carrier Grating Formation in InP n⁺nn⁺ Structures using Monte Carlo Technique

100%
Gružinskis V., Shiktorov P., Starikov E.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
943-946
EN
Electron transport in 5μm long InP n⁺nn⁺ structure with the n-region doping of 10^{15} cm^{-3} is theoretically investigated by the Monte Carlo particle technique at low lattice temperature (T = 10 K), when dominating scattering mechanism is the optical phonon emission. It is shown that at the constant bias a free-carrier grating can be formed inside the n-region. The free-carrier grating formation conditions are analysed by Monte Carlo particle simulation of electric field profiles and noise in the considered InP structure.
4
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Plasma Instability Noise in InP n⁺nn⁺ Structures: Monte Carlo Simulation

100%
Gružinskis V., Shiktorov P., Starikov E.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
947-950
EN
The current noise in n⁺nn⁺ InP structures at dominating low temperature (T = 10 K) optical phonon emission is simulated by Monte Carlo particle technique. The n-region length of simulated structures is varied from 1 to 100 μm. The peaks related to the near collisionless and optical phonon emission dominated plasma instabilities are recognized in current noise spectral density spectra.
5
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Coherent Terahertz Radiation Generation Assisted by Low-Temperature Optical Phonon Emission: Achievements and Perspectives

88%
Shiktorov P., Starikov E., Gružinskis V., Varani L., Reggiani L.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
795-802
EN
The conditions for THz radiation generation caused by electron transite time resonance in momentum and real spaces under low-temperature optical-phonon emission are analyzed. It is shown that such a phenomenon provides a unique possibility to realize the sub-THz and THz radiation generation at the border of the electrooptical and electronic techniques by using both the approaches: (i) amplification of transverse electromagnetic waves in 3D bulk materials and 2D quantum wells, and (ii) longitudinal current instabilities in submicron and overmicron n⁺nn⁺ diodes.
6
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Modeling of THz-Electro-Optical Sampling Measurements

88%
Shiktorov P., Starikov E., Gružinskis V., Varani L., Reggiani L.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
913-916
EN
We carry out a theoretical analysis of THz-electro-optical sampling experimental technique applied to semiconductor structures. The difficulties/impossibility of determining the small-signal conductivity spectrum in the framework of such a technique are analyzed and discussed.
7
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High-Frequency Noise in Modern FET/HEMT Channels Caused by the Excitation of 2D-Plasma Waves

88%
Shiktorov P., Starikov E., Gružinskis V., Varani L., Reggiani L.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
117-120
EN
The problems related with the intrinsic noise in FET/HEMT channels induced by continuous branching of the total current between channel and gate are considered in the framework of a simple analytical model and its predictions on the current-noise spectra. Main branching-induced effects such as the appearance of an additional noise related to the excitation of plasma waves, its dependence on FET/HEMT embedding circuits, interference properties, etc. are analysed.
8
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Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors

76%
Starikov E., Shiktorov P., Gružinskis V., Varani L., Vaissière J., Palermo C., Reggiani L.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
408-411
FR
Monte Carlo simulations of high-field transport in semiconductor nitrides, GaN and InN, is used to calculate the velocity-field characteristics and the high-frequency behavior of the differential mobility, spectral density of velocity fluctuations, and noise temperature. It is found that due to very short relaxation time scales of nitrides, the characteristic frequencies associated with extrema and cutoff decay of the negative differential mobility, etc. are shifted to higher frequency range with respect to the case of standard A_3B_5 compounds. This property is favorable for applications of nitrides in the THz frequency range.
9
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Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits

64%
Shiktorov P., Starikov E., Gružinskis V., Varani L., Vaissière J., Reggiani L., Pérez S., González T.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
396-399
EN
We report Monte Carlo simulations of electronic noise in heavily doped nanometric GaAs Schottky-barrier diodes operating in series with a parallel resonant circuit when a high-frequency large-signal voltage is applied to the whole system. Significant modifications of the noise spectrum with respect to the unloaded diode are found to occur in the THz-region.
10
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THz Emission Induced by an Optical Beating in Nanometer-Length High-Electron-Mobility Transistors

64%
Nouvel P., Torres J., Marinchio H., Laurent T., Palermo C., Varani L., Teppe F., Shiktorov P., Starikov E., Gruzinskis V.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
199-202
EN
Experimental results of direct measurement of resonant terahertz emission optically excited in InGaAs HEMT channels are presented. The emission was attributed to two-dimensional plasma waves excited by photogeneration of electron-hole pairs in the HEMT channel at the frequency of the beating of two cw-laser sources. The presence of resonances for the radiation emission in the range of f_0 ± 10 GHz (with f_0 from 0.3 up to 0.5 THz) detected by a Si-bolometer is found. The intensity of THz emission exhibits a nonlinear growth with increase of the pumping power.
11
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Small-Signal Characterization of FET/HEMT for Terahertz Applications

64%
Starikov E., Shiktorov P., Gružinskis V., Marinchio H., Nouvel P., Torres J., Palermo C., Chusseau L., Varani L., Ziadé P.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
203-205
EN
Calculations of the small-signal response of InGaAs HEMTs by using the hydrodynamic approach coupled with a pseudo-2D Poisson equation are performed. The spectra of small-signal admittance and impedance are found to demonstrate series of the resonant peaks corresponding to excitation of plasma waves. Possibilities and conditions of instability onset and THz signal detection are discussed.
12
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Plasma Oscillations in Nanotransistors: Application to THz Radiations Detection and Generation

64%
Marinchio H., Sabatini G., Palermo C., Nouvel P., Torres J., Varani L., Shiktorov P., Starikov E., Gružinskis V.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
103-106
EN
By means of a numerical hydrodynamic model, we consider the mechanism of collective plasma oscillations in a field-effect transistor channel under different excitations and biasing conditions. First, we consider the case of a device externally-excited by a harmonic optical beating or an electronic excitation under constant current condition at the drain. Both situations exhibit sharp resonances related to the first odd plasma modes illustrating the possibility of using the HEMT as a terahertz photomixer or detector. Then, we demonstrate that the frequencies, amplitudes and quality factors of the resonances can be strongly modified by varying the drain biasing condition from current- to voltage-driven operation.
13
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Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells

52%
Laurent T., Sharma R., Torres J., Nouvel P., Blin S., Chusseau L., Palermo C., Varani L., Cordier Y., Chmielowska M., Faurie J., Beaumont B., Shiktorov P., Starikov E., Gruzinskis V.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
107-110
EN
We report transmission measurements of GaN quantum well grown on sapphire substrate in the 220-325 GHz frequency band at low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found.
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