In this paper we present the results of theoretical calculations for spin polarization η of band electrons in diluted magnetic semiconductor subjected to a polarized light wave and a carrier-warming electric field E. It was shown that the maximum value of η_{max} can be reached at a certain E_{max} corresponding to the peak of the carrier drift velocity v(E). For the higher doping impurity concentration, the values of η_{max} become lower due to the equivalent decrease of electron temperature.
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