The current-voltage characteristics (I-V) of non-stoichiometric bismuth tellurite crystals were studied in a range of temperatures from 150°C to 350°C and fields up to 2.5 kV/cm with asymmetric contacts (In-Ga eutectic and Na₂SiO₃). The I-V curves and observed monopolar injection are described by the approximation of space charge limited currents. In the composition of 47% Bi₂O₃-53% TeO₂ electronic conduction is prevailed. In the composition 43% Bi₂O₃-57% TeO₂ the conductivity is contributed by electrons and holes. The spectrum of local states in the band gap of the studied crystals is quasicontinuous, which cannot be described by models of a discrete or exponential distribution.
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