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Optically Active Centers in Er-Implanted Silicon

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Przybylińska H., Jantsch W., Hendorfer G., Palmetshofer L., Wilson R. J., Sealy B. J.
Acta Physica Polonica A
|
1995
|
vol. 88
|
issue 5
877-880
EN
We show that of all the optically active Er centers in silicon found after ion implantation and optimum annealing (900°C) the isolated cubic interstitial Er is the dominant PL center above 100 K. At lower anneal temperatures ( ≈ 600°C) with later rapid thermal anneal at 900°C oxygen related centers also emit.
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