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Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells

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Kundrotas J., Čerškus A., Ašmontas S., Valušis G., Sherliker B., Halsall M., Harrison P., Steer M.

Acta Physica Polonica A

2005

vol. 107

issue 2

245-249

We present a photoluminescence study of optical transitions in Be acceptor-doped GaAs/AlAs multiple quantum wells at room and liquid nitrogen temperatures. We investigate excitonic spectra and reveal acceptor-impurity induced effects in multiple quantum wells having different width.

Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells

81%

Čechavičius B., Kavaliauskas J., Krivaitė G., Seliuta D., Širmulis E., Devenson J., Valušis G., Sherliker B., Halsall M., Steer M., Harrison P.

Acta Physica Polonica A

2005

vol. 107

issue 2

328-332

We report on optical, photoreflectance and surface photovoltage, as well as terahertz photocurrent investigation of Be-doped GaAs/AlAs multiple quantum wells at room and liquid helium temperatures, respectively. From the Franz-Keldysh oscillations observed in photoreflectance spectra we determine built-in electric fields within the structure. Interband transition energies calculated by the transfer matrix method are in qualitative agreement with experimentally determined values for the samples having various, from 2×10^{10} up to 2.5×10^{12} cm^{-2}, Be doping densities. The photocurrent observed in the range of 5.4-7.3 THz we associate with photoionization of Be-acceptor states.

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2 Acta Physica Polonica A

2 2005

2 Halsall M.

2 Harrison P.

2 Sherliker B.

2 Steer M.

2 Valušis G.

1 Ašmontas S.

1 Devenson J.

1 Kavaliauskas J.

1 Krivaitė G.

1 Kundrotas J.

1 Seliuta D.

1 Čechavičius B.

1 Čerškus A.

1 Širmulis E.

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Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells

Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells