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Light-Emitting Diode Degradation and Low-Frequency Noise Characteristics

100%
Šaulys B., Matukas J., Palenskis V., Pralgauskaitė S., Kulikauskas G.
Acta Physica Polonica A
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2011
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vol. 119
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issue 4
514-520
EN
Comprehensive investigation of phosphide-based red and nitride-based blue light-emitting diodes characteristics and physical processes that take place in device structure during aging has been carried out. Analysis of noise characteristics (the emitting-light power and the LED voltage fluctuations, also their cross-correlation factor) shows that investigated LEDs degradation is caused by defects that lead to the leakage current and non-radiating recombination increase in the active region or its interfaces. Appearance of the defects first of all manifests in noise characteristics: intensive and strongly correlated 1/f^{α} type optical and electrical fluctuations come out.
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Optical and Electrical Noise Characteristics of Side Emitting LEDs

86%
Šaulys B., Kornijčuk V., Matukas J., Palenskis V., Pralgauskaitė S., Glemža K.
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EN
Low frequency noise characteristics of nitride based blue side emitting diodes have been investigated. It is shown that investigated devices distinguish by 1/f^α-type optical and electrical fluctuations caused by various generation-recombination processes through defects formed generation-recombination centers. At higher frequencies optical shot noise due to random photon emission prevails 1/f^α-type spectrum. The results have shown that low frequency optical and electrical noises are strongly correlated at small current region, but at higher forward current not correlated noise components dominate. Lenses and secondary optics of the investigated devices do not influence output light.
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