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Pressure Induced Shallow-Deep A_{1} Transition for Sn Donor in GaAs Observed in Diamond Anvil Cell Photoluminescence Experiment

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Dmochowski J., Stradling R., Sly J., Dunstan D., Prins A., Adams A.

Acta Physica Polonica A

1995

vol. 87

issue 2

457-460

Variable-pressure Dunstan-type diamond anvil high pressure cell and a low temperature photoluminescence technique are used to observe the shallow-deep A_{1} transition for Sn donors in highly Sn doped n-type (≈ 10^{18} cm^{-3}) GaAs. Fermi level pinning to the position of the deep Sn donor state entering the gap close to 30 kbar pressure is observed. Drastic narrowing of the near-band-edge luminescence is observed in the transition region. The deep-donor pressure coefficient of 2 meV/kbar with respect to the valence band is deduced from the energy position of the deep donor-acceptor transitions.

Evidence of Γ-Free or Bound-to-Deep Acceptor Character of the Y-1.2 eV Deep Photoluminescence Line in n-type Ge-doped GaAs Derived from High Hydrostatic Pressure Experiments in Diamond Anvil Cell

100%

Dmochowski J., Stradling R., Prins A., Dunstan D., Adams A., Kukimoto H.

Acta Physica Polonica A

1993

vol. 84

issue 4

649-652

The dependence of the energy position of the deep defect-related photoluminescence line Y-1.2 eV in Ge-doped GaAs on high hydrostatic pressure is investigated using a Dunstan-like diamond anvil cell. The observation that the energy position of the line follows that of the Γ-conduction band minimum in the 1 bar-30 kbar pressure range demonstrates that the line has Γ-(free or shallow bound)-to-deep acceptor character. This fact confirms the deep-acceptor character of the deep defect, most likely a donor impurity-Ga vacancy complex, which contributes to the Y:-1.2 eV photoluminescence line.

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2 Acta Physica Polonica A

1 1995

1 1993

2 Adams A.

2 Dmochowski J.

2 Dunstan D.

2 Prins A.

2 Stradling R.

1 Kukimoto H.

1 Sly J.

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Pressure Induced Shallow-Deep A_{1} Transition for Sn Donor in GaAs Observed in Diamond Anvil Cell Photoluminescence Experiment

Evidence of Γ-Free or Bound-to-Deep Acceptor Character of the Y-1.2 eV Deep Photoluminescence Line in n-type Ge-doped GaAs Derived from High Hydrostatic Pressure Experiments in Diamond Anvil Cell