Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 6

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Theoretical Analysis of Optical Losses in CdS/CdTe Solar Cells

100%
Roshko V., Kosyachenko L., Grushko E.
Acta Physica Polonica A
|
2011
|
vol. 120
|
issue 5
954-956
EN
Based on the known refractive index and extinction coefficient, calculations of optical losses in glass/transparent conducting oxide/CdS/CdTe solar cells have been carried out taking into account reflections at the interfaces and absorption in the transparent conducting oxide (indium tin oxide or SnO_2:F) and CdS layers. It has been shown that the losses caused by reflections at the interfaces result in lowering the short-circuit current by ≈ 9% whereas absorption in the transparent conducting oxide and CdS layers with the typical thicknesses lead to losses of 15-16% for glass/SnO_2/CdS/CdTe, and 22-24% for glass/indium tin oxide/CdS/CdTe solar cells.
2
Content available remote

Limitations on Thickness of Absorber Layer in CdS/CdTe Solar Cells

100%
Mykytyuk T., Roshko V., Kosyachenko L., Grushko E.
Acta Physica Polonica A
|
2012
|
vol. 122
|
issue 6
1073-1076
EN
Calculations of the integrated absorptive capacity of CdTe layer taking into account the spectrum of the AM1.5 solar radiation and the absorption coefficient of CdTe are carried out. The recombination losses at the front and rear surfaces of the CdTe layer and in the space-charge region are also calculated based on the continuity equation. The restrictions on the thickness of CdTe in CdS/CdTe heterojunction have been ascertained taking into account all types of losses. It is shown that in CdTe, the almost complete absorption of photons (99.9%) in the hν > E_{g} range is observed at a layer thickness of more than 20-30 μm, and the absorptive capacity of photons in a CdTe layer of thickness 1 μm is about 93%. The obtained results indicate that when the CdTe absorber layer is very thin, it is impossible to avoid a noticeable decrease of the short circuit current density J_{sc} as compared with a typical thickness of the absorber layer. The loss in J_{sc} is 19-20% when the thickness is 0.5 μm compared to 5% for a thickness of 2-3 μm.
3
Content available remote

Spectral Distribution of Photoelectric Efficiency οf Thin-Film CdS/CdTe Heterostructure

76%
Kosyachenko L., Lashkarev G., Grushko E., Ievtushenko A., Sklyarchuk V., Mathew X., Paulson P.
Acta Physica Polonica A
|
2009
|
vol. 116
|
issue 5
862-864
EN
The spectral distribution of the quantum efficiency in thin-film CdS/CdTe solar cells is being investigated by taking into account the drift and diffusion components of photocurrent, recombination at the CdS-CdTe interface, the back surface of the CdTe absorber layer and in the space-charge region. The effect of uncompensated acceptor concentration, lifetime of minority carriers and surface recombination velocity on the charge collection efficiency are discussed. The losses caused by reflections and absorption in the CdS and indium tin oxide layers are also considered.
4
Content available remote

Detector with High Internal Photocurrent Gain Based on ZnO:N

76%
Kosyachenko L., Lashkarev G., Ievtushenko A., Lazorenko V., Sklyarchuk V., Sklyarchuk O.
Acta Physica Polonica A
|
2011
|
vol. 119
|
issue 5
681-682
EN
The photoresponsive structures prepared by magnetron sputtering of ZnO:N on p-Si substrates followed by vacuum evaporation of semi-transparent Ni film on ZnO surface were investigated. The mentioned structures show high sensitivity that sharply enhances with increase of applied voltage. Under a bias 5 V, the responsivities at λ = 390 and 850 nm are equal to 210 A/W and 110 A/W which correspond to the quantum efficiencies of 655 and 165, respectively. It is suggested that the observed high response is attributed to internal gain in phototransistor structure containing Ni/n-ZnO Schottky contact as emitter junction and n-ZnO/p-Si heterostructure as collector junction.
5
Content available remote

Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors

76%
Yurtsenyuk N., Kosyachenko L., Sklyarchuk V., Maslyanchuk O., Sklyarchuk O., Grushko E.
Acta Physica Polonica A
|
2011
|
vol. 120
|
issue 5
957-959
EN
The electrical properties of single Cd_{1 - x}Mn_{x}Te (x= 0.07 - 0.39) crystals with a resistivity of ≈ 10^8 Ω cm at 300 K have been studied. The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes. The energy of ionization and the degree of compensation levels have been found.
6
Content available remote

Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures

52%
Ievtushenko A., Lashkarev G., Lazorenko V., Karpyna V., Sichkovskyi V., Kosyachenko L., Sklyarchuk V., Sklyarchuk O., Bosy V., Korzhinski F., Ulyashin A., Khranovskyy V., Yakimova R.
Acta Physica Polonica A
|
2008
|
vol. 114
|
issue 5
1123-1129
EN
Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by dc magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at λ= 390 nm and the time constant of photoresponse about 10 μs for Al/ZnO:N/Al structures with 4 μm interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio ≈10² at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.