Persistent currents in mesoscopic systems made of a very clean metal and with nearly flat Fermi surface are studied. It is shown that the inclusion of the orbital magnetic interaction between electrons can lead to spontaneous currents (spontaneous fluxes) and to quantized flux trapping if the number of interacting electrons is large enough: The energy of the system is discussed and the self-consistent formulas for the spontaneous flux and for the quantized flux in the system is derived. The influence of the spin on the presented phenomena is discussed.
The role played by the magnetostatic interaction in mesoscopic multichannel systems is discussed. We show that the interaction of currents from different channels, when taken in the selfconsistent mean field approximation, leads to selfinductance terms in the Hamiltonian producing an internal magnetic flux. Such multichannel systems can exhibit spontaneous flux or flux expulsion. The dependence of these phenomena on the parameters of the system is discussed.
The electromagnetic response of a mesoscopic cylinder made of a normal metal or a semiconductor is studied. The relation between the induced current J(q,w) and the electric field E(q,w) is derived. It is shown that the kernel K(q,w) which determines the properties of the system has a finite limit which implies infinite conductivity. The mesoscopic cylinder by virtue of its topology and small dimensions can support a persistent current. If the coherence of currents from different channels is strong enough a novel effect - the self-sustaining current can be obtained. We show that a mesoscopic multichannel system exhibits some features which bear resemblance to the superconductor.
We present the results of ab initio study of electronic and magnetic properties of Gd(In_{1-x}Snₓ)₃ alloys carried out with the use of FP-LAPW method. Our precise ab initio calculations for the first time uniquelly confirmed experimentally based predictions that the ground state magnetic structure of the alloys is antiferromagnetic and that upon the In/Sn substitution the magnetic structure undergo transition, changing the antiferromagnetic ordering from the (π00)-type for the GdSn₃ compound to the (ππ0)-type for the GdIn₃ one. Moreover, calculations gave an explanation of the oscillatory variation of density of states at Fermi level indicated by XPS measurements.
Collective phenomena due to persistent currents in carbon multiwall nanotubes are studied. The formula for persistent currents minimising free energy and conditions for the stability of persistent currents in multiwall nanotubes in magnetic field are derived. Numerical calculations performed show the possibility of obtaining spontaneous currents in two optimal configurations: undoped armchair-only multiwall nanotubes up to 0.01 K, and zig-zag-chiral-chiral-zig-zag multiwall nanotubes doped to -3.033 eV up to about 1 K. The latter configuration may exhibit also the diamagnetic expulsion of magnetic field, which according to our calculations can reach 20% of the external flux.
Spin related phenomena in quantum nanostructures have attracted recently much interest due to fast growing field of spintronics. In particular complex nanostructures are important as they provide a versatile system to manipulate spin and the electronic states. Such systems can be used as spin memory devices or scalable quantum bits. We investigate the spin relaxation for an electron in a complex structure composed of a quantum dot surrounded by a quantum ring. We shown that modifications of the confinement potential result in the substantial increase of the spin relaxation time.
It is shown that a mesoscopic metallic system can exhibit a phase transition to a low temperature state with a spontaneous orbital current if it is sufficiently free of elastic defect scattering. The interaction among the electrons, which is the reason of the phase transition, is of the magnetic origin and it leads to an ordered state of the orbital magnetic moments.
Transport properties of a two-dimensional nanostructure composed of a quantum dot surrounded by a quantum ring (dot-ring nanostructure), are discussed. This complex system is a highly controllable object. Conduction through dot-ring nanostructure depends crucially on the coupling strength of its states to the electrodes, which is related to the spatial distribution of the electron's wave functions in dot-ring nanostructure. This distribution can be strongly modified, e.g., by the electrical gating so that the ground and excited states move between the inner dot and the outer ring. In this paper we show that this property can be used to control single-electron DC current through dot-ring nanostructure in the Coulomb blockade regime so that it can be used as a single electron transistor.
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