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Effect of Hydrogen on the Electronic Properties of GaAs_{1-y}N_y Heterostructures

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Bissiri M., Gaspari V., Baldassarri H. v. H. G., Ranalli F., Polimeni A., Capizzi M., Nucara A., Geddo M., Fischer M., Reinhardt M., Forchel A.

Acta Physica Polonica A

2001

vol. 100

issue 3

365-371

We have performed photoluminescence measurements in order to study the optical properties of hydrogenated GaAs_{1-y}N_y/GaAs heterostructures for y ranging from 0 to 0.03. Hydrogen irradiation leads to: (i) a progressive passivation of N-related recombination lines for low N content (y≈ 0.001); (ii) a sizable blue shift of the band gap in the "alloy" limit (y≈0.01). Thermal annealing restores the optical properties samples had before hydrogenation. These results can be accounted for by the formation of N^- -H^+ complexes and demonstrate that hydrogen irradiation provides a powerful tool for the analysis of photoluminescence spectra of GaAs_{1-y}N_y.

Hydrogen Tuning of (InGa)(AsN) Optical Properties

100%

Baldassarri H. v. H. G., Ranalli F., Bissiri M., Gaspari V., Polimeni A., Capizzi M., Nucara A., Geddo M., Fischer M., Reinhardt M., Forchel A.

Acta Physica Polonica A

2001

vol. 100

issue 3

373-378

The effects of atomic hydrogen irradiation on the optical properties of (InGa)(AsN) single quantum wells investigated by means of photoluminescence spectroscopy. For increasing hydrogen dose, the photoluminescence band peak energy of each nitrogen-containing sample blue-shifts and for high hydrogen dose it reaches that of a corresponding nitrogen-free reference sample. This effect is accompanied by a broadening of the photoluminescence band line width and by a decrease in the photoluminescence efficiency. Thermal annealing at 550ºC fully restores the original band gap value and the photoluminescence line width of the sample before hydrogenation. An interpretation of these phenomena is proposed in terms of an H perturbation of the charge distribution around the strongly electronegative N atoms, leading most likely to the formation of H-N complexes, and to an ensuing electronic passivation of nitrogen.

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2 Acta Physica Polonica A

2 2001

2 Baldassarri H. v. H. G.

2 Bissiri M.

2 Capizzi M.

2 Fischer M.

2 Forchel A.

2 Gaspari V.

2 Geddo M.

2 Nucara A.

2 Polimeni A.

2 Ranalli F.

2 Reinhardt M.

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Effect of Hydrogen on the Electronic Properties of GaAs_{1-y}N_y Heterostructures

Hydrogen Tuning of (InGa)(AsN) Optical Properties