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TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs

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Ratajczak J., Łaszcz A., Czerwinski A., Kątcki J., Tang X., Reckinger N., Yarekha D., Larrieu G., Dubois E.
Acta Physica Polonica A
|
2009
|
vol. 116
|
issue S
S-89-S-91
EN
The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.
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