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The characterization of nanostructures is a topic of vital interest, since the dimensions of commercially available semiconductor devices are now in a range, where quantum size effects become evident. In this paper, various methods are presented to characterize low-dimensional structures. Magnetic depopulation, tunneling, far infrared transmission, photo-conductivity and magnetophonon resonances are used to determine the low-dimensional sub-band energies. For each method, the special features are discussed and it is demonstrated that the different methods yield different, complementary information.
EN
Tunneling processes in double-barrier GaAs/AlAs diodes with an incorporated AlGaAs pre-barrier were studied under hydrostatic pressure. The electrical characteristics resulting from a pre-barrier on the side of the emitter can be explained at 1 bar, solely by the Γ-profile: increasing pressure shows that the pre-barrier does not reduce the Γ-X tunneling. A pre-barrier on the collector side leads to charge buildup at the X minimum within the AlAs collector barrier.
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