The photoelectromagnetic investigations of graphene has been performed using noncontact technique. The dependence of photoelectromagnetic response on magnetic field induction, illumination intensity for different photon energies, and frequency of illumination chopping is presented. We anticipate our paper to be a starting point for investigations of carrier diffusion length in this material. Such investigations should be essential for development of graphene electronic and optoelectronic devices.
Methodology of impedance measurements and ferroelectric hysteresis loops observed in temperature range 292-475 K for antimony sulfoiodide (SbSI) grown from vapour phase are discussed. Temperature dependences of spontaneous polarization and coercive field of SbSI crystals are presented.
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