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Electronic Phase Transition in Layered Materials 1T-TaS_{x}Se_{2-x} Probed by Cryogenic STM/STS

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Hasegawa T., Shiino O., Yamaguchi W., Endo T., Sugawara H., Kitazawa K.

Acta Physica Polonica A

1998

vol. 93

issue 2

297-305

A metal-insulator transition, Mott transition, in layered materials 1T-TaS_{x}Se_{2-x} was investigated by cryogenic scanning tunneling microscopy/ spectroscopy. At 77 K, tunneling spectra in the insulating phase showed a conduction band with almost half filling, which becomes narrower as x decreases. Around the transition point x≈1.4 at 77 K, we observed a sign of gap opening without an overshooting peak at zero bias, supporting the Mott localization picture in which a carrier number vanishes at the transition point. From the site-specified scanning tunneling spectroscopy measurements, furthermore, electrons were found to localize at the charge density wave crest positions. In 1T-TaS_{2}, we have also found that both metallic and insulating phases coexist in a nanometer scale just above the transition temperature, 180 K. >From the minimum size of the insulating region, the coherence length of Mott insulating state was evaluated to be≈5 nm.

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1 Acta Physica Polonica A

1 1998

1 Endo T.

1 Hasegawa T.

1 Kitazawa K.

1 Shiino O.

1 Sugawara H.

1 Yamaguchi W.

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Electronic Phase Transition in Layered Materials 1T-TaS_{x}Se_{2-x} Probed by Cryogenic STM/STS