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Porous Silicon Avalanche LEDs and their Applications in Optoelectronics and Information Displays

100%

Jaguiro P., Katsuba P., Lazarouk S., Smirnov A.

Acta Physica Polonica A

2007

vol. 112

issue 5

1031-1036

The use of silicon based light emitting diodes may completely solve the problem of low compatibility of optoelectronics elements and silicon chip. At present time the most suitable kinds of Si-LEDs are monocrystal and porous silicon avalanche LEDs. They have advantages such as long operation lifetime (>10000 hours), continuous spectrum, which allows to filter RGB colors, operation voltages (<12 V), extremely sharp voltage-current characteristic, nanosecond response time, and high high operation current densities (up to 8000 A/cm^2 in pulse mode). Rather low energy efficiency (<1%) is not so significant for near to eyes (NTE) microdisplays. These advantages open a way to design a high performance and cost effective passive addressed microdisplays.

Image Formation by Ink-Jet Printing in Micro- and Nanoporous Anodic Alumina Film with Capsulating

100%

Kazarkin B., Mukha Y., Stsiapanau A., Smirnov A.

Acta Physica Polonica A

2018

vol. 133

issue 4

771-773

The image formation process based on the method of ink-jet printing in films of anodic aluminum oxide has been developed and investigated. The image resolution of 500 dpi was achieved on the films with 150 μm depth of pores. The films of anodic aluminum oxide were produced on aluminum foil by partial or through anodizing of aluminum followed by filling the pores with ink and their capsulation for protection. The obtained films have exceptional thermal and chemical stability. The low-temperature and low-cost process described in this article is promising for mass production of elements of microelectronic devices.

Effect of Stress on Defect Transformation in B^{+} and Ag^{+} Implanted HgCdTe/CdZnTe Structures

76%

Savkina R., Smirnov A., Gudymenko A., Kladko V., Sizov F., Frigeri C.

vol. 125

issue 4

1003-1005

The results of X-ray, scanning electron microscopy and atomic force microscopy studies of near-surface regions of (111) Hg_{1-x}Cd_{x}Te (x = 0.223) structures are presented. These structures were obtained by low-energy implantation with boron and silver ions. TRIM calculation of the depth dependences of impurity concentration and implantation-induced mechanical stresses in the layer near-surface regions has revealed that the low-energy implantation of HgCdTe solid solution with elements of different ionic radiuses (B^{+} and Ag^{+}) leads to the formation of layers with significant difference in thickness (400 nm and 100 nm, respectively), as well as with maximum mechanical stresses differing by two orders of magnitude (1.4 × 10^3 Pa and 2.2 × 10^5 Pa, respectively). The structural properties of the Hg_{1-x}Cd_{x}Te epilayers were investigated using X-ray high-resolution reciprocal space mapping.

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3 Acta Physica Polonica A

1 2018

1 2014

1 2007

3 Smirnov A.

1 Frigeri C.

1 Gudymenko A.

1 Jaguiro P.

1 Katsuba P.

1 Kazarkin B.

1 Kladko V.

1 Lazarouk S.

1 Mukha Y.

1 Savkina R.

1 Sizov F.

1 Stsiapanau A.

Search results

Porous Silicon Avalanche LEDs and their Applications in Optoelectronics and Information Displays

Image Formation by Ink-Jet Printing in Micro- and Nanoporous Anodic Alumina Film with Capsulating

Effect of Stress on Defect Transformation in B^{+} and Ag^{+} Implanted HgCdTe/CdZnTe Structures