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RHEED Intensity Oscillations During the Growth of Indium Ultrathin Films

100%

Stróżak M., Jałochowski M., Subotowicz M.

Acta Physica Polonica A

1992

vol. 81

issue 2

239-245

The ultrathin high-purity single-crystal indium films with atomically flat surfaces, and precisely known thicknesses in UHV conditions were prepared These films were deposited on the Si(111)-(7×7) and Si(111)-(6×6)Au substrate cooled to temperatures up to 110 K. The growth of the indium films was studied by. reflection high-energy electron diffraction (RHEED). Pronounced specular beam intensity oscillations are found. The consequences for the understanding of RHEED intensity oscillations and of the growth of ultrathin films are discussed. The amplitude of the RHEED specular beam intensity oscillations as a function f the polar angle and temperature substrate Si was measured.

Analysis of Shapes of RHEED Intensity Oscillations Observed for Growing Films

76%

Mitura Z., Daniluk A., Stróżak M., Jalochowski M., Smal A., Subotowicz M.

Acta Physica Polonica A

1991

vol. 80

issue 3

365-368

A new method of analysing shapes of RHEED intensity oscillations observed during epitaxial growth of ultrathin films is presented. The intensity of the specular electron beam is computed by solving the one-dimensional Schrödinger equation. The method can be used for interpreting data collected at very low glancing angle (< 1°) of the incident electron beam. In the paper we show numerically determined shapes of the intensity oscillations for different cases of settling of atoms at surfaces of growing films.

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2 Acta Physica Polonica A

1 1992

1 1991

2 Stróżak M.

2 Subotowicz M.

1 Daniluk A.

1 Jalochowski M.

1 Jałochowski M.

1 Mitura Z.

1 Smal A.

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RHEED Intensity Oscillations During the Growth of Indium Ultrathin Films

Analysis of Shapes of RHEED Intensity Oscillations Observed for Growing Films