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vol. 126
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issue 3
652-656
EN
We show the special dynamic characteristic of Gaussian quantum discord, exhibited by two-mode Gaussian symmetric squeezed thermal states (STS) in continuous-variable (CV) systems with a common non-Markovian environment, is definitely different from Markov processes. We demonstrate that Gaussian quantum discord can be created whenever the information flow from environment back to the system. We also show that the rate of decrease for Gaussian quantum discord is related to the coupling constant. We discover that the initial value of Gaussian quantum discord is determined by the average number of thermal photons of the system.
EN
We report ferromagnetic resonance study of the magnetization reversal in the exchange-coupled MnO/(Ga,Mn)As system. The low-field parts of ferromagnetic resonance spectra measured along [1/10] and [100] directions of (Ga,Mn)As were combined into hysteresis loops, which under field-cooling conditions similarly to SQUID loops are shifted toward negative magnetic fields. The magnetization reversal process revealed by the loops occurred remarkably asymmetric for both sample configurations.
EN
Ferromagnetic resonance study of the exchange coupled (Ga,Mn)As/ GaAs/(Ga,Mn)As heterostructures is reported. The measurements were performed on the series of samples with varying thicknesses d_{GaAs} of nonmagnetic GaAs spacer, established d_{GaAs}-dependent extent of weak and strong interlayer exchange coupling, judging on the observation of one or two ferromagnetic resonance modes.
EN
The study of ferromagnetic semiconductors continues to be of great interest because of their potential for spintronic devices. While there has been much progress in our understanding of ferromagnetic semiconductor materials - particularly of the canonical III-V system Ga_{1-x}Mn_xAs - many issues still remain unresolved. One of these is the nature of interlayer exchange coupling in GaMnAs-based multilayers, an issue that is important from the point of view of possible spintronic applications. In this connection, it is important to establish under what conditions the interlayer exchange coupling between successive GaMnAs layers is antiferromagnetic or ferromagnetic, since manipulation of such interlayer exchange coupling can then be directly applied to achieve giant magnetoresistance and other devices based on this material. In this review we will describe magneto-transport, magnetization, and neutron reflectometry experiments applied to two types of GaMnAs-based multilayer structures - superlattices and tri-layers - consisting of GaMnAs layers separated by non-magnetic GaAs spacers. These measurements serve to identify conditions under which AFM coupling will occur in such GaMnAs/GaAs multilayer systems, thus providing us the information which can be used for manipulating magnetization (and thus also giant magnetoresistance) in structures based on the ferromagnetic semiconductor GaMnAs.
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46%
EN
Bi2Te3, (Bi1−xSbx )2Te3 and layered Bi2Te3/(Bi1−xSbx)2Te3 superlattices fabricated by nanoalloying. Our approach is based on the sequential sputtering of nanoscale layers of the elements and subsequent annealing in order to induce a solid state reaction. While conventionally Bi2(SexTe1−x )3 compounds are used as n-type V2VI3 material system, the deposition of Se proves to be problematic especially for sputtering deposition and is therefore replaced by (Bi1−xSbx )2Te3. A superlattice consisting of 25 nm Bi2Te3/25 nm (Bi0:9Sb0:1)2Te3 – ML (periodicity of 50 nm) was synthesized and annealed at temperatures of 150, 200, 225, and 250°C. The layers are slightly rough and polycrystalline, and the grain sizes increase with increasing annealing temperature. The XRD analysis shows a pronounced (00l) texture of the sputtered layers. SIMS depth profiles reveal that the chemical separation into layers is present, yet smeared out to some degree after annealing at 200°C. High Seebeck coefficients of up to ~−190 μV/K were achieved. A high maximum power factor of 22 μW/cmK2 can be attained after annealing at 250 °C for 12 h. The superlattice system Bi2Te3 / (Bi1−xSbx )2Te3 can compete with Bi2Te3 / Bi2(SexTe1−x )3 in terms of electrical properties while representing a good practical alternative for the sputter deposition due to the substitution of problematic Se with Sb. Cross-plane thermal conductivities are in the range of 0.55 to 0.6 W/mK. The thermal conductivity is generally reduced due to the nanocrystallinity of the material, however, there seems to be no measurable reduction of the thermal conductivity by the superlattice-type 2D nanostructuring.
EN
We present the results of low temperature annealing studies of Ga_{1-x}Mn_xAs epilayers grown by low temperature molecular beam epitaxy in a wide range of Mn concentrations (0.01
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Magnetic Properties of Epitaxial Fe/(Ga,Mn)As Hybrids

38%
EN
Thin-film structures composed of two kinds of ferromagnetic material - metallic Fe and semiconducting (Ga,Mn)As - were investigated by means of SQUID magnetometry and ferromagnetic resonance spectroscopy. Dependence of remnant magnetic moment on temperature showed unexpected anisotropic features when recorded along two orthogonal in-plane directions. For one of these orientations, the change in sign of the slope of m(T) curve at the Curie point of (Ga,Mn)As was observed, while for the other, an analogous m(T) curve retained monotonic character. Based on the comparison with ferromagnetic resonance data, the apparent non-monotonicity was attributed to the temperature-induced change of balance between the external magnetic field and uniaxial magnetic anisotropy in the plane of Fe layer.
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