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EN
Therapeutic applications and global market of commercialized biopharmaceuticals-recombinant medicines have been presented. The first and second generation of genetically engineered products such as: hormones, cytokines, blood factors, monoclonal antibodies and others approved to date or undergoing clinical investigations in the US and EU have been described. They are used to treat or prevent many diseases, including: diabetes, growth deficiency, anemia, cardio-vascular disorders and, especially, immune-mediated inflammatory disorders and various cancers. The authors have also presented current global biopharmaceutical market, leading biopharmaceuticals, the fastest growing recombinant protein categories and strategic market analysis and forecasts until 2010.
EN
The signal coming from SiO_{2} layer of MOS structure have large noise-to-signal ratio. This has two reasons - first: the dielectric layers have small Raman efficiency, second: the thickness of the dielectric layers are of the order of 10 nm, so the volume of the material irradiated with laser light is small. At the other side spectroscopic and optical data carry the information about important properties of the structure like mechanical stress. Distribution of mechanical stress introduce an important contribution to the electric properties of the electronic systems based on the MOS structures. Therefore, it is important to "distillate" the optical data from the noise. In this contribution the authors discuss some methods of denoising of the Raman signal. The discussed methods compare treatments like wavelet analysis or convolution. The work is illustrated with some examples of the extraction of the data coming from thin layers. The examples of application of the optical data in the description of the properties of the studied structures are presented.
EN
Two kinds of samples were investigated with micro-Raman spectroscopy. MOS structures having poly-silicon gates with metallic contact were made of Al with addition of 1% Cu. The other type of the sample was Si wafer subjected to surface oxidation. The position of the sample was changed along z-axis in order to maximize the Raman signal coming from different layers of the structure. Two MOS structures were studied, both prepared in the same process, and after that only one was thermally-treated at temperature 400°C. The spectra coming from different layers of the structure were analyzed numerically using Lorentzian profile. The authors want to point out that the measurements of the Raman signal performed through the metallic contact of the poly-silicon gate gave anomalously large signal coming from silicon structure. This effect was observed only for thermally threated sample. This suggest that in the case of thermally-treated structure the signal observed through the metallic contact was magnified by surface-enhanced Raman scattering phenomenon.
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