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1
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Magneto-Optical Studies of Quantum States of Two-Dimensional Hole Gas at Single Ga_{1-x}Al_xAs/GaAs Heterojunction

100%
Bryja L.
Acta Physica Polonica A
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2004
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vol. 106
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issue 2
131-140
EN
The detailed studies of low temperature (T=2~K) polarization resolved photoluminescence and photoluminescence excitation studies from heavily modulation doped Ga_{1-x}Al_xAs/GaAs single heterojunctions in continuous wave and time-resolved conditions are reported. The free conduction band GaAs electrons recombination with two-dimensional holes observed in low magnetic fields enabled us to determine experimentally the valence subband Landau levels. The high magnetic field photoluminescence spectra are dominated by excitonic transitions which are attributed to neutral excitons rather than to positively charged ones.
2
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Skyrmions in a Hole Gas with Large Spin Gap and Strong Disorder

45%
Bryja L., Ryczko K., Wójs A., Misiewicz J., Potemski M.
Acta Physica Polonica A
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2006
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vol. 110
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issue 2
163-168
EN
In the photoluminescence excitation spectra of two-dimensional valence holes with large spin gap and strong disorder we find evidence for quantum Hall ferromagnetism and small skyrmions around the Landau level filling factorν=1. This interpretation is supported by numerical calculations.
3
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Shake-Up Processes in Photoluminescence of Two-Dimensional Holes in a High Magnetic Field

39%
Wójs A., Bryja L., Misiewicz J., Potemski M., Reuter D., Wieck A.
Acta Physica Polonica A
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2006
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vol. 110
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issue 3
429-435
EN
Recombination of excitons and positive trions is studied by two-beam photoluminescence of a two-dimensional hole gas in a high magnetic field. The singlet, dark-triplet and bright-triplet states of a free trion are resolved, and their binding energies are determined. Recombination of acceptor-bound trions is also detected, including a low-energy cyclotron replica, corresponding to a hole shake-up process. Identification of all these different transitions was possible by analysis of optical selection rules and the comparison of experimental spectra with realistic numerical calculations.
4
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Combined Exciton-Cyclotron Resonance in Photoluminescence of a Two-Dimensional Hole Gas

39%
Jadczak J., Bryja L., Płochocka P., Wójs A., Misiewicz J., Maude D., Potemski M.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
852-853
EN
A two-dimensional hole gas in an asymmetric GaAs/Ga_{1-x}Al_{x}As quantum well is studied by polarization-resolved photoluminescence in high magnetic fields (up to B = 20 T) and at low temperatures (down to T = 50 mK). In addition to the previously reported dominant emission channels of various free and acceptor-bound trions, the high-energy hole cyclotron replicas of the bound states are now also observed, corresponding to the combined exciton-cyclotron resonance. Identification of different transitions in the rich, multi-peak spectra was possible by the analysis of optical selection rules and comparison of the experimental spectra with realistic numerical calculations.
5
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Nonlinear Zeeman Splitting of Holes in Doped GaAs Heterostructures

39%
Kubisa M., Ryczko K., Jadczak J., Bryja L., Misiewicz J., Potemski M.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
609-611
EN
Polarization-resolved photoluminescence from two-dimensional GaAs/GaAlAs heterostructures doped with acceptors was studied in high magnetic fields. Measurements were carried out in low temperatures up to 2 K and magnetic field up to 21 T. Experiments performed in the Faraday configuration enabled to resolve hole states with different spin orientation. We observed a nonlinear behavior of valence-band g factor in strong magnetic fields. To explain obtained results, a detailed theoretical calculation was carried out based on the Luttinger model for valence-band states. We examined the spin splitting of hole levels under the influence of both external magnetic field and built-in electric field existing in doped heterostructures. Changes of hole g factor with the width of the structure and the density of two-dimensional carriers are discussed.
6
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X-ray Synchrotron Studies of Nanostructure Formation in High Temperature - Pressure Treated Silicon Implanted with Hydrogen

39%
Wieteska K., Wierzchowski W., Graeff W., Misiuk A., Barcz A., Bryja L., Popov V.
Acta Physica Polonica A
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2002
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vol. 102
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issue 2
239-244
EN
The effects of various high temperature-pressure treatments in Czochralski grown silicon (Cz-Si) implanted with 130 keV hydrogen to the dose of 4times10^{16} cm^{-2} were investigated using synchrotron X-ray topographic methods and rocking curve measurements. The high temperature- pressure processes included 10 h annealing at 450°C, 650°C, and 725°C at argon pressure 12 kbar and 1 bar. The topographic investigations were performed with projection and section methods in back-reflection and transmission geometry. It was found that annealing resulted in significantly reduced strain induced by the implantation, which became undetectable with presently used very sensitive synchrotron arrangement. A significant difference between the Cz-Si:H samples annealed at high and atmospheric pressure was observed. In the first case a distinct topographic contrast attributed to the formation of comparatively larger inclusions was observed. This effect was different at different temperatures. The samples annealed at enhanced pressure were more uniform and often produced significant interference effects.
7
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Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure

39%
Misiuk A., Bąk-Misiuk J., Bryja L., Kątcki J., Ratajczak J., Jun J., Surma B.
Acta Physica Polonica A
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2002
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vol. 101
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issue 5
719-727
EN
Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O^+ dose, D, within the 6×10^{17}-2×10^{18} cm^{-2} range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10^{17} cm^{-2}). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
8
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Experimental and Theoretical Studies of Free and Acceptor-Bound Positive Magneto-Trions

39%
Bryja L., Wójs A., Płochocka-Polack P., Gładysiewicz A., Misiewicz J., Potemski M.
Acta Physica Polonica A
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2007
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vol. 112
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issue 2
415-418
EN
By combination of polarization-resolved photoluminescence, transport, and realistic numerics we study energy and recombination spectra of free and acceptor-bound positive trions in a quasi-two-dimensional hole gas. The singlet-triplet crossing in the trion ground state is found at B≈12 T, and a slight reduction of all trion binding energies coincident with the formation of a Laughlin hole fluid is observed at B≈14.2 T.
9
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Time Resolved Photoluminescence Study of the Wide (Cd,Mn)Te/(Cd,Mg)Te Quantum Well

33%
Kutrowska J., Bugajny P., Baranowski M., Bryja L., Syperek M., Wójs A., Misiewicz J., Wiater M., Karczewski G.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
895-897
EN
The static and dynamic properties of excitons and trions in a 80 nm wide Cd_{1-x}Mn_xTe/Cd_{0.7}Mg_{0.3}Te quantum well with extremely small Mn content (x=0.00027) have been studied by means of time-integrated and time-resolved photoluminescence experiment at low and elevated temperatures. The trion binding energy has been estimated to be 2.6 ± 0.8 meV. The exciton and trion lifetimes have been measured to be ≈ 150 ps, and ≈ 200 ps, respectively. The temperature dependence of both lifetimes together with the multicomponent character of the PL decay process suggest a spatial localization of excitons and trions in the investigated quantum well.
10
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Evidence of Singlet-Triplet Crossing in Photoluminescence of Positively Charged Excitons in GaAs Quantum Wells

33%
Bryja L., Wójs A., Jadczak J., Misiewicz J., Płochocka P., Potemski M., Reuter D., Wieck A.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1073-1077
EN
Positively charged excitons in a two-dimensional hole gas in symmetric and asymmetric GaAs/Ga_{1-x}Al_{x}As quantum wells are studied in polarization-resolved photoluminescence experiments in high magnetic fields B (up to 23 T) and low temperatures (down to 300 mK). The experiments are accompanied by numerical calculations of a real structure. The whole family of trions (the singlet and a pair of triplets) are observed. The Coulomb energies crossing of singlet and triplet is found: hidden in symmetric and visible in asymmetric structures.
11
Content available remote

Exciton Exchange between Nearly-Free and Acceptor-Bound States of a Positive Trion Assisted by Cyclotron Excitation

33%
Jadczak J., Bryja L., Wójs A., Bartsch G., Yakovlev D., Bayer M., Plochocka P., Potemski M., Reuter D., Wieck A.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
600-601
EN
In magneto-photoluminescence spectra of a two-dimensional hole gas in a GaAs quantum well we observe coupling of two different radiative states. The pair of coupled states are an acceptor-bound trion AX^{+} and an essentially free (only weakly localized by a shallow lateral potential) trion X^{+}, brought into resonance by an additional cyclotron excitation controlled by the magnetic field. The coupling mechanism is the exciton transfer, and the optical signature is a clear anticrossing of the emission lines of an X^{+} and a cyclotron replica of the AX^{+}.
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