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Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures

100%

Požela J., Požela K., Sužiedėlis A., Jucienė V., Petkun V.

Acta Physica Polonica A

2008

vol. 113

issue 3

989-992

A new approach for reduction of scattering rate of electrons by polar optical phonons in the double barrier heterojunction quantum well is proposed. This approach is based on the phonon localization in narrow phonon wells. The enhancement of the electron saturated drift velocity in the Al_{0.2}Ga_{0.8}As/GaAs/Al_{0.2}Ga_{0.8}As high electron mobility transistor channel is envisaged theoretically and observed experimentally. The drift velocity in the channel in high electric fields (E >10 kV/cm) exceeded the maximal drift velocity in bulk GaAs (v_{max}=10^7 cm/s) and achieved the value of 4×10^7 cm/s.

Hot Electron Effect in Degenerate Semiconductor Tunnel Junction

86%

Ašmontas S., Gradauskas J., Petkun V., Seliuta D., Sužiedėlis A., Urbelis A.

Acta Physica Polonica A

2005

vol. 107

issue 1

198-202

We report on the results of experimental study of free carrier heating in degenerate GaAs tunnel p-n diodes when the carriers are excited by pulsed microwave radiation. Free carrier heating is responsible for the electromotive force in the diode. The magnitude of the electromotive force linearly depends on pulsed microwave power and increases with the decrease in semiconductor lattice temperature. It is almost independent of the pulsed microwave frequency and of p-n junction plane orientation in respect to electric field direction. In the tunnelling regime the dark current in the diode is reduced, however, at high enough forward bias the diffusive current is stimulated due to hot carrier phenomenon.

High Power Microwave Detection in Asymmetrically Shaped n-Al_xGa_{1-x}As Structures

73%

Ašmontas S., Čerškus A., Gradauskas J., Kundrotas J., Lučun A., Petkun V., Sužiedėlis A., Šilėnas A.

Acta Physica Polonica A

2005

vol. 107

issue 2

315-318

Investigations of detection of high power microwaves in planar asymmetrically shaped microwave diodes on the basis of Al_xGa_{1-x}As ternary semiconductors with various AlAs mole fraction are presented. The principle of operation of the microwave diodes is based on carrier heating phenomena in asymmetrically shaped homogeneous semiconductor structure due to different distribution of the electric field strength along the sample. Experimental results of microwave detection on the barrier-less asymmetrically shaped diodes are presented paying special attention to the homogeneity of Al_xGa_{1-x}As which was monitored by photoluminescence technique.

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3 Acta Physica Polonica A

1 2008

2 2005

3 Petkun V.

3 Sužiedėlis A.

2 Ašmontas S.

2 Gradauskas J.

1 Jucienė V.

1 Kundrotas J.

1 Lučun A.

1 Požela J.

1 Požela K.

1 Seliuta D.

1 Urbelis A.

1 Čerškus A.

1 Šilėnas A.

Search results

Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures

Hot Electron Effect in Degenerate Semiconductor Tunnel Junction

High Power Microwave Detection in Asymmetrically Shaped n-Al_xGa_{1-x}As Structures