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High-quality single crystal of Ce_{2}RhSi_{3} was studied by means of thermoelectric power measurements carried out down to 2 K in external magnetic fields up to 13 T. The results obtained above 50 K were interpreted in terms of a modified two-band model that takes into account temperature variation of the width of 4f-derived narrow band located near the Fermi level. At lower temperatures the thermopower exhibits more complex temperature dependences that likely involve interplays of magnetic exchange, Kondo and crystal-field interactions.
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