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issue 5
851-853
EN
Inverse spin Hall effect consists in conversion of spin currents into electric currents and has recently been observed using spin-pumping operated by ferromagnetic resonance in permalloy/Pt(Cr) thin film structures. We prepared several Co_2Cr_{0.4}Fe_{0.6}Al/Pt thin film structures to observe for the first time inverse spin Hall effect in bilayer structures comprising ferromagnetic half-metallic Heusler alloy. In but a few Co_2Cr_{0.4}Fe_{0.6}Al/Pt samples we succeeded in observing inverse spin Hall effect voltage of few microvolts by spin pumping resulting from ferromagnetic resonance. This confirms that spin polarized current can be transferred into Pt layer. Inverse spin Hall effect was 2-3 times larger than that detected in permalloy/Pt bilayer under the same conditions.
2
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Micromagnetic Approach to Exchange Bias

100%
EN
We present a micromagnetic approach to the exchange bias in ferromagnetic/antiferromagnetic thin film systems with a small number of irreversible interfacial magnetic moments. We express the exchange bias field H_{EB} in terms of the fundamental micromagnetic length scale of ferromagnetic - the exchange length l_{ex}. The benefit from this approach is a better separation of the factor related to the ferromagnetic layer from the factor related to the ferromagnetic/antiferromagnetic coupling at interfaces. Using this approach we estimate the upper limit of H_{EB} in real ferromagnetic/antiferromagnetic systems.
EN
A model describing ferromagnetic resonance in thin-film magnetic metallic tubes is proposed and compared with the experimental ferromagnetic resonance spectra of the thin-film Ni.
EN
The Gilbert damping for Co_2CrAl (Co_2Cr_{0.3}Fe_{0.7}Al) and Ni_2MnSn Heusler alloy films was investigated as a function of temperature. The best films reveals the Gilbert damping nearly independent of temperature. Magnetic relaxation in Co_2CrAl is strongly influenced by magnetic inhomogeneities due to phase separation. The best Ni_2MnSn epitaxial films have comparable Gilbert damping α of 6× 10^{-3} as half-metallic Co_2Cr_{0.3}Fe_{0.7}Al films with α = 3 × 10^{-3}.
EN
We report on structural and magnetic properties of Ni_{50}Mn_{50-x}Sn_x (x=12÷14) films and compare them with those of the bulk Ni-Mn-Sn alloys. Magnetic measurements reveal clear presence of martensitic transformation in bulk alloys but in the flash-evaporated Ni-Mn-Sn thin films martensitic transformation is usually less visible. The best film samples annealed for 1 h at about 900 K exhibit clear signs of martensitic transformation: i.e., a small defect in magnetization and a substantial increase in ferromagnetic resonance line width.
EN
Hysteresis loops of thin films of Fe_{73.5}Cu_{1}R_{3}Si_{13.5}B_{9} (R = Nd, Gd, Ho, Y) alloys were studied by the magnetooptical Faraday method. The films were deposited by flash evaporation technique onto cooled glass substrates. Lanthanides were chosen as substitutes for niobium in the FINEMET type alloys. Coercivity, H_{c}, was determined from the easy- and hard-axis hysteresis loops. The as-deposited films containing Gd and Ho are characterized by rather low values of H_{c} while the films with Nd and Y show a high isotropic value of H_{c}. Attempts were made to determine the conditions of the film annealing which would ensure the optimum soft magnetic properties of the films studied.
EN
Electrical resistance (R) of Ho thin films evaporated in vacuum ≈ 10^{-7} Pa was studied in a temperature range from 2 K up to 300 K and in magnetic field up to 9 T. Measurements showed resistance anomalies below 20 K - minima of R value in 36 nm and 215 nm thin films and resistivity maximum at 3.58 K in 215 nm Ho film. Increasing value of the magnetic field, applied perpendicular to film surface up to 5 T, caused increasing suppression of the R minima in these films with subsequent disappearance of them in fields above 5 T. Maximum of R value in 215 nm thin film at 3.58 K decreased with increasing flux density up to 5 T and it was suppressed at fields above 5 T. X-ray diffraction of these films revealed two phases composition consisting of the hexagonal Ho and of cubic HoH_2. The preferential crystal orientation of both phases was detected.
EN
We present results of in situ temperature measurements of resistivity for some amorphous or partially crystalline Heusler alloy films: Co_{2}CrAl, Co_{2}MnGa and off-stoichiometric Ni_{2}Mn_{1+x}Sn_{x}, Ni_{2}Mn_{1-x}Ga_{x} that are known to exhibit half-metallic properties and martensitic transformations, respectively. From ρ vs. T characteristics we distinguish various stages of chemical and structural ordering in the films. They appear to be quite distinct in both systems investigated. The resistivity results are compared with magnetic characteristics for Co_{2}MnGa with a high Curie temperature.
9
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Anisotropy Distribution in NiFe/Au/Co/Au Multilayers

71%
EN
We present results of FMR investigations of anisotropy distribution in uncoupled [NiFe/Au/Co/Au]_N structures with alternating in-plane (NiFe) and out-of-plane anisotropies (Co). It is concluded that for NiFe layers anisotropy distribution is negligible and can be increased by "dusting" of NiFe with ultrathin Co layers. The perpendicular anisotropy K_{U}^2 of Co layers depends on Co thickness in a standard way ∝ 1/d_{Co}, and is distributed in a range of ≈10-20% of K_{U}^2 (i.e., ≈ 1.5× 10^6 erg/cm^3).
EN
We determined exchange H_{ex} and rotatable H_{rot} anisotropy fields of multilayers that comprise 10 nm Co₂FeSi (CFS) layers exchange coupled to 20 nm IrMn layers by using ferromagnetic resonance with a vector network analyzer (VNA-FMR). The multilayer structures consist of IrMn/bottom (b)-CFS/IrMn/middle (m)-CFS/IrMn/top (t)-CFS/IrMn layers so that each CFS layer is surrounded by a pair of IrMn layers. In the structures, the exchange bias field propagates in such a way that H_{ex}^{t} > H_{ex}^{m} > H_{ex}^{b} for the top, middle, and bottom layer, respectively. FMR response measured along the exchange bias (EB) axis consist of only two absorptions related to the (b+m)- and (t)-CFS layers, respectively. Exchange and rotatable anisotropy determined independently from angular and dispersion measurements of the resonance fields are nearly the same. Rotatable anisotropy field scales with the exchange bias field in these complex structures.
11
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Exchange Bias in Ni-Mn-Sn Heusler Alloy Films

71%
EN
We report a relatively large exchange bias effect observed for the first time in Ni-Mn-Sn thin films with different microstructure and composition: a Ni_{50}Mn_{36}Sn_{14} epitaxial film (A), a Ni_{50}Mn_{43}Sn_7 film which is phase decomposed (B), and a NiMn/Ni_{50}Mn_{25}Sn_{25} bilayer (C). Despite the samples differ markedly in both microstructure and composition H_{EB} does not substantially differs at 5 K. Exchange bias decreases with increasing T approximately as H_{EB} (T) ∝ H_{EB} (5K)/T with H_{EB} (5K) of 180 Oe and 60 Oe for sample B and C, respectively and almost linearly for sample A with H_{EB} (5K) = 65 Oe. Blocking temperature where the exchange bias vanishes is 40, 50 and 80 K for sample A, C and B, respectively. The results suggest that the role of AFM/FM interfaces is not substantial in formation of exchange bias in Ni-Mn-Sn Heusler alloy films and exchange bias is rather related to AFM/FM interactions in nanoscale.
EN
Saturation magnetic induction, B_{s}, and coercive field, H_{c}, have been studied upon annealing in films flash evaporated from Fe_{73.5}M_{1}Nb_{3}Si_{13.5}B_{8} alloys. The changes in B_{s} significantly diverged at increasing annealing temperature, T_{a}, and did not indicate any formation of ultrafine grain phase in the films. H_{c} measured as an angular function in the plane of the films revealed oscillations due to weak in-plane anisotropy. The coercivity increased in the course of annealing at increasing T_{a}, while the in-plane anisotropy decreased at the same time.
EN
Ferromagnetic resonance has been investigated in Ni_{2}MnSn Heusler alloy films. The films were deposited at 673
EN
Thermal stability and magnetic properties of thin films, of a few Fe-based amorphous and nanocrystalline alloys, have been studied. The alloys belong to the class Fe-M-B, whose representatives are: Fe_{87}Zr_{4}Cu_{1}B_{8}, Fe_{87}Zr_{7}B_{6}, and Fe_{87}Zr_{7}Al_{1}B_{5} and are of particular interest because of their wide variety of magnetic properties. The films were prepared by flash evaporation onto liquid nitrogen cooled substrates. Measurements of the Kerr effect, the Hall effect, and ferromagnetic resonance in the films were carried out as functions of the annealing temperature. It was found that the changes in the coercive field H_{c}, resonance linewidth ΔH_{pp}, effective magnetization M_{eff}, Hall parameters, and resistance were correlated with the structural changes in the studied films.
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