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Hall Mobility Field Effect in Two Layer Conductivity Samples

100%
Mekys A., Storasta J., Zindulis A., Smilga A., Balakauskas S.
Acta Physica Polonica A
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2008
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vol. 114
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issue 4
903-912
EN
Classical Hall mobility experimental setup was applied for samples with parallel plane (sandwich) variable conductivity layers. The measured effective Hall mobility strongly depends on applied electric field and does not characterise the real carrier mobility. Numerical modelling explains the effect as a consequence of electric field redistribution and lowering at Hall contacts. Measurement of carrier mobility in such structures is suggested.
2
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Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

86%
Janavičius A., Balakauskas S., Kazlauskienė V., Mekys A., Purlys R., Storasta J.
Acta Physica Polonica A
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2008
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vol. 114
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issue 4
779-790
EN
We considered the reasons of superdiffusivity and measured profiles of boron and phosphorus in crystalline silicon at room temperature. The superdiffusivity or ultrafast diffusion of metastable vacancies at room temperature in Si crystal irradiated by soft X-rays was obtained experimentally. In this work, we presented experimentally obtained diffusion coefficients of singly and doubly negatively charged long-lived excited vacancies. These high concentration charged metastable vacancies (about 10^{13} cm^{-3}) at room temperature can very fast diffuse changing electrical conductivity and the Hall mobility of carriers. We measured the superdiffusivity of negatively charged vacancies, generated by the Auger effect in the regions of the sample, which were not affected by X-rays. In this paper, we presented the obtained superdiffusion profiles of boron and phosphorus in crystalline silicon measured with secondary-ion mass spectrometer.
3
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Investigation and Generation of Vacancies in Alpha Quartz by Soft X-Rays

86%
Janavičius A., Purlys R., Bulkšas A., Balakauskas S., Mekys A., Šablinskas V.
Acta Physica Polonica A
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2009
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vol. 116
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issue 6
1076-1080
EN
In this paper we applied the soft-X-ray radiation for generation of point defects, vacancies, and chemical reactions in quartz (SiO_{2}), taking into account our earlier made similar experiments with crystal silicon and importance of quartz for applications in many fields. In this case only radiative Auger's effects with electrons and electric dipole of atoms transitions can generate metastable vacancies, point defects, and induce chemical reactions. Usually, for point defects generation doses of gamma rays are used. We measured values of the Bragg reflections of X-rays and calculated mean square deviations of atoms in crystal lattice for defining the dynamics of irradiated point defects. We accomplished infrared measurements for establishing of generated chemical reactions, and conductivity measurements were also done.
4
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Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

86%
Janavičius A., Storasta J., Purlys R., Mekys A., Balakauskas S., Norgėla Ž.
Acta Physica Polonica A
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2007
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vol. 112
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issue 1
55-68
EN
We applied soft X-rays for investigation of dynamics of the Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states produced in the lattice after ejection of the Auger electrons. The irradiated irregularities and defects of the lattice cause a change of the Bragg reflection maxima. Several resonance phenomena are related to metastable states introduced into Si crystal by soft X-rays irradiation. The resonance of mean square displacements of Si atoms in the lattice and the resonance of the Hall mobility after irradiation are obtained and considered.
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