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  1. 1 Acta Physica Polonica A

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  1. 1 2017

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  1. 1 Kociubiński A.

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Modeling, Simulation and Characterization of Aluminum Implantation in 4H-SiC for Large-Area Photodiode Technology

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Kociubiński A.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 2
225-228
EN
Simulation, modeling and characterization of the aluminum ion implantation in 4H-SiC for large-area photodiode technology have been presented in this paper. Modeling and simulation have been performed using the SRIM and TCAD software EDA environments. Main goals were to present and compare the single vs. multiple ion implantation results as well to develop processes leading to achieve required implantation profiles.
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